Solid state photoelectronics: the current state and new prospects

Burlakov, I. D.; Dirochka, A. I.; Korneeva, M. D.; Ponomarenko, V. P.; Filachev, Anatoly M.

doi:10.1134/s1064226916100053

Cited by 2 publications

(2 citation statements)

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“…This is achieved by creating new photosensitive heterostructures using epitaxy methods, which allows one to form photosensitive structures with blocking, buffer, barrier, and other layers. The developed structures will make it possible to eliminate individual components of dark currents and thereby significantly increase the photosensitive characteristics of photodetector arrays [1,2].…”

Section: Introductionmentioning

confidence: 99%

“…The first one is the creation of photodiode arrays based on high-quality HgCdTe (cadmium mercury telluride, CMT) heteroepitaxial structures with a p-on-n architecture (local p-type regions are formed in the base n-type active layer). A conventional n + structure on a p layer is also used; then, the base p-type active layer is not vacancy-doped but formed using external acceptor doping [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

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Unipolar Semiconductor Barrier Structures for Infrared Photodetector Arrays (Review)

Burlakov

Kulchitsky

Войцеховский

et al. 2021

J. Commun. Technol. Electron.

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We analyze the current state of research in the field of creating unipolar semiconductor barrier structures based on various materials for infrared photodetector arrays, which make it possible to reduce the dark currents and thereby improve the threshold characteristics and ensure operation at high cooling temperatures. The main ways of minimizing a barrier for holes in the valence band are considered by the example of a photosensitive structure based on the n-CMT layer. It is shown that the nBn barrier structures are an alternative for creating photodiode sensing matrices for the mid-and far-infrared photodetector arrays.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%