Coupling TiO 2 with a narrow band gap semiconductor acting as the photosensitizer has attracted much attention in solar energy exploitation. In this work, the porous TiO 2 film was first formed on the conducting glass plate (CGP) substrate by the decomposition of polyethylene glycol (PEG) mixing in titanium hydroxide sol at 450℃. Then, the TiO 2 /Ag 2 Se interface composite film was fabricated by interface reaction of AgNO 3 with NaSeSO 3 on the activated surface of porous TiO 2 film. The results of SEM and XRD analyses indicated that the porous TiO 2 layer was made up of the anatase crystal, and the Ag 2 Se layer was made up of congregative small particles that have low-temperature α-phase structure. Due to its efficient charge separation for the photo-induced electron-hole pairs, the TiO 2 /Ag 2 Se interface composite film as-prepared has good photovoltaic property and high photocurrent response for visible light, which have been confirmed by the photoelectrochemical measurements.TiO 2 /Ag 2 Se interface composite film, preparation, measurement, photoelectrochemistry