Solid-state image converters on the basis of the GaAs/ZnS structures

Kalygina, V. M.; Tyazhev, A.; Yaskevich, T. M.

doi:10.1134/s1063782609070239

Cited by 4 publications

(6 citation statements)

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“…It can be noted that the influence of voltage sign during irradiating of GaAs by x-ray radiation with quanta energy range 40-140 keV is smaller as compared with data of the work [1]. It has been explained by the fact, that x-ray radiation is absorbed in all volume of the sample in the indicated energy range (Fig.…”

Section: Resultsmentioning

confidence: 54%

“…As well as in the case of x-ray radiation influence with quanta energy 17 keV a photocurrent at negative voltage sign is more than at positive voltage sign irrespective of voltage on the detector. However observable effect of voltage polarity on the photocurrent is essentially less, than in [1].…”

Section: Resultsmentioning

confidence: 85%

“…These values dI ph /dR are essentially above corresponding values of sensitivity in the range of 1 R/s ≤ R ≤ 12 R/s: 92.5 nA·s/R and 6.8 nA·s/R accordingly [1].…”

Section: Resultsmentioning

confidence: 97%

“…Earlier it has been shown, that solid-state imager converters based on GaAs-ZnS:Cu at least with one transparent conductive electrode are sensitive to x-ray radiation with quanta energy 17 keV, and exposure rate 2-12 R/s [1]. Such converters can be used as the ionizing-radiation detectors with optical reading-out of the information.…”

Section: Introductionmentioning

confidence: 99%

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X-ray image converter based on GaAs-ZnS structures

Kalygina

Tyahzev²,

Yaskevich

2009

2009 International Siberian Conference on Control and Communications

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show abstract

Section: Resultsmentioning

confidence: 54%

Section: Resultsmentioning

confidence: 85%

“…These values dI ph /dR are essentially above corresponding values of sensitivity in the range of 1 R/s ≤ R ≤ 12 R/s: 92.5 nA·s/R and 6.8 nA·s/R accordingly [1].…”

Section: Resultsmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

X-ray image converter based on GaAs-ZnS structures

Kalygina

Tyahzev²,

Yaskevich

2009

2009 International Siberian Conference on Control and Communications

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“…The GaAs:Cr/ZnS:Cu(Al) structures have been used in the design and fabrication of solid-state image converters operating under excitation of the structure by infrared and X-ray radiations with a brightness corresponding to the threshold values for black white (10-2 cd/m 2 ) and color (3 cd/m 2 ) images at doses in the range 0-12 R/s (Kalygina, et al, 2009). These structures can also be used for the development of ionizing radiation detectors with optical reading of information.…”

Section: Introductionmentioning

confidence: 99%

Multicomponent Solid Solutions (ZnSe)1-x-y(Si2)x(GaP)y

Saidov¹,

Sn.²,

Rakhmonov³

et al. 2012

JMSR

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Epitaxy layers of solid solution (ZnSe) 1-x-y (Si 2 ) x (GaP) y (0  х  0.03, 0  y  0.09) were grown up from the limited volume of tin solution-melting by method of liquid phase epitaxy. Profiles of distribution of components Ga, P, Zn, Se and Si in grown up epitaxy layers are defined. In spectrum of the photoluminescence of surface of the solid solution at 5 K 2 peaks of radiation are found out. They are probably caused by compounds Si 2 (1.67 eV) and GaP (2.21 eV). It has been shown that covalent coupling Si-Si and Ga-P cause impurity levels laying in the forbidden zone of the solid solution (ZnSe) 1-x-y (Si 2 ) x (GaP) y . Isotype heterojunction n-GaPn09) (without luminophor) gives red and yellow luminescence which is caused by electronic transitions from Si-Si and from Ga-P, taking place in tetrahedron lattice of the solid solution.

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Reassessing Soviet industrialization as primitive Soviet accumulation: Social reproduction, collectivization and peasant women's revolts under Stalin

Lyubchenko

2024

Journal of Agrarian Change

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This paper adopts a novel Social Reproduction feminist approach to re‐evaluate the Soviet experience of industrialization within the context of global research on primitive accumulation. I analyse the first Five‐Year Plan as a unique process of ‘primitive Soviet accumulation,’ focusing on the Zhenotdel collectivization campaign and the often‐overlooked role of Zhenotdel peasant women delegates [krestyanki delegatki]. The study explores their involvement in peasant women's revolts against collectivization, emphasizing the significance of these events for the Zhenotdel's emancipatory programme in the village. Considering class as a social relation to the conditions of life's reproduction, I demonstrate: (1) how primitive Soviet accumulation reshaped the gendered metabolic relationship between land and labour during the first Five‐Year Plan and (2) yet, the allocation of surplus into the expanded Soviet state apparatus laid the foundation for the distinctive Soviet mother–worker gender contract and social citizenship model.

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Solid-state image converters on the basis of the GaAs/ZnS structures

Cited by 4 publications

References 1 publication

X-ray image converter based on GaAs-ZnS structures

X-ray image converter based on GaAs-ZnS structures

Multicomponent Solid Solutions (ZnSe)1-x-y(Si2)x(GaP)y

Reassessing Soviet industrialization as primitive Soviet accumulation: Social reproduction, collectivization and peasant women's revolts under Stalin

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