1973
DOI: 10.1063/1.1661927
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Solid-state electronic structure effects of silicon Kβ x-ray spectra produced in α-particle excitation

Abstract: Both Si and SiO2 crystals were bombarded by a 3.2-MeV α-particle beam and the subsequent Si K x-ray yield was measured. The Kα x-ray spectra show fairly close agreement; however, the structure in the Kβ x-ray spectra is quite different for Si and SiO2. These results are interpreted as effects due to the chemical bonding of the oxygen atoms to silicon.

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“…Very small contributions from silicon to silicon pulse pile-up and silicon-noise pulse pile-up could cause departures from the assumed Voigtian shape of the upperenergy flank of the silicon peak. Multiple ionization of silicon by alpha particles is known to result in high-energy satellites [13] which cause further distortion. These effects could augment the derived phosphorus peak.…”
Section: Conclusion Regarding Phosphorus Offsetsmentioning
confidence: 99%
“…Very small contributions from silicon to silicon pulse pile-up and silicon-noise pulse pile-up could cause departures from the assumed Voigtian shape of the upperenergy flank of the silicon peak. Multiple ionization of silicon by alpha particles is known to result in high-energy satellites [13] which cause further distortion. These effects could augment the derived phosphorus peak.…”
Section: Conclusion Regarding Phosphorus Offsetsmentioning
confidence: 99%