Solid State Detectors for High Radiation Environments

Kramberger, G.

doi:10.1007/978-3-030-35318-6_21

Cited by 4 publications

(4 citation statements)

References 101 publications

(53 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…where β is the proportionality factor (effective trapping damage constant) and τ eff,0 is the effective carrier lifetime before irradiation, which in standard silicon already after very moderate radiation levels can be neglected. Similar values for various silicon materials (FZ [57], DOFZ [57], MCz [58], and EPI [59]) and different heavy particle irradiations [6], [57] have been observed, resulting in β values of 4-6 × 10 −16 cm 2 /ns for electrons and 5-8 × 10 −16 cm 2 /ns for holes. In a more recent work focusing on high-fluence irradiations, deviations from the linear behavior shown in Fig.…”

Section: E Charge Carrier Trappingsupporting

confidence: 64%

See 1 more Smart Citation

Displacement Damage in Silicon Detectors for High Energy Physics

Moll

2018

IEEE Trans. Nucl. Sci.

174

131

View full text Add to dashboard Cite

In this paper, we review the radiation damage issues caused by displacement damage in silicon sensors operating in the harsh radiation environments of high energy physics experiments. The origin and parameterization of the changes in the macroscopic electrical sensor properties such as depletion voltage, leakage current, and charge collection efficiency as a function of fluence of different particles, annealing time, and annealing temperature are reviewed. The impact of impurities in the silicon base crystal on these changes is discussed, revealing their effects on the degradation of the sensor properties. Differences on how segmented and nonsegmented devices are affected and how device engineering can improve radiation hardness are explained and characterization techniques used to study sensor performance and the electric field distribution inside the irradiated devices are outlined. Finally, recent developments in radiation hardening and simulation techniques using technology computer-aided design modeling are given. This paper concludes with radiation damage issues in presently operating experiments and gives an outlook of radiation-hardened technologies to be used in the future upgrades of the Large Hadron Collider and beyond.

show abstract

Section: E Charge Carrier Trappingsupporting

confidence: 64%

“…Recent review articles and books with relevance for displacement damage in silicon devices for HEP applications have been published by Kramberger [6], Leroy and Rancoita [7], Srour and Palko [8], and Hartmann [9].…”

Section: Introductionmentioning

confidence: 99%

Displacement Damage in Silicon Detectors for High Energy Physics

Moll

2018

IEEE Trans. Nucl. Sci.

174

131

View full text Add to dashboard Cite

show abstract

“…where 𝑎, the prefactor, and 𝑏, the critical field, are the parameters that this study will determine, and 𝐸 is the electric field. The KDetSim package [11] was used to simulate the detector. The KDetSim package allows the user to define the doping profile of the sensor and uses this to calculate the electric field.…”

Section: Theorymentioning

confidence: 99%

Determination of impact ionization parameters for low gain avalanche detectors produced by HPK

Howard¹,

Cindro²,

Hiti³

et al. 2022

J. Inst.

View full text Add to dashboard Cite

A set of unirradiated Low Gain Avalanche Detectors from Hamamatsu Photonics from the HGTD prototype 2 run for the upgrade of experiments at the High Luminosity Large Hadron Collider were used to determine the impact ionization parameters for silicon, particularly in the electric field range of ∼30 V/μm which is of interest for LGADs. The parameters' dependence on temperature was also determined. Their validity on irradiated sensors up to 2.5·1015 cm-2 was also tested and found to be acceptable at low biases but further work should be done to determine the dependence on fluence.

show abstract

“…However, an increase in the instantaneous luminosity is followed by an increase in radiation that leads to an increase in the leakage currents in the silicon material 9,10 . Furthermore, future Si-based particle detectors will feature several millions of tightly packed readout channels to meet detector requirements for proper sensing and signal conditioning.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Proton Radiation-induced Effects on Polymer-based Relative Humidity Sensor

Kapić

Tsirou

Verdini

et al. 2023

Preprint

View full text Add to dashboard Cite

Cooling at subzero temperatures and the subsequent monitoring of humidity in the modern Si-based high-energy physics detectors are indispensable but challenging due to space, radiation and magnetic field issues. In this study, a group of relative humidity sensors have been tested for operation reaching high irradiation doses adequate to the inner sub-detectors during the HL-LHC operation. The sensors were exposed to the 24 GeV/s proton beam for a period of 33 days reaching the fluence of 3 x 1016 protons/cm2. The test has demonstrated sensors radiation tolerance at high doses and their ability to provide valid alerts to the detector control and safety systems in the event of any changes in humidity. The irradiation was conducted in a temperature- and humidity-controlled environment. Tested samples were placed in a specially designed cold box able to guarantee an ambient temperature of -20 oC. Throughout the entire test, the compressed dry air was used to keep low humidity levels (around 0 %rh) inside the cold box, and a 100 ppm pre-calibrated gas mixture was used to test the sensors responsiveness before and after the irradiation process. Additionally, an on-purpose designed signal conditioning unit was used to compensate for the cable parasitic effects.

show abstract

Solid State Detectors for High Radiation Environments

Cited by 4 publications

References 101 publications

Displacement Damage in Silicon Detectors for High Energy Physics

Displacement Damage in Silicon Detectors for High Energy Physics

Determination of impact ionization parameters for low gain avalanche detectors produced by HPK

Analysis of Proton Radiation-induced Effects on Polymer-based Relative Humidity Sensor

Contact Info

Product

Resources

About