Solid-state crystal growth of lead-free ferroelectrics

Kabakov, Peter; Dean, Camin; Kurusingal, Valsala; Cheng, Zhenxiang; Lee, Ho-Yong; Zhang, Shujun

doi:10.1039/d0tc01220c

Cited by 31 publications

(32 citation statements)

References 566 publications

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“…It is also particularly suited to grow crystals which melt incongruently or have volatile components, [ 12 ] while the disadvantage is that pores are entrapped during the pressing and sintering process and would cause potential problems in some applications, such as low transparency in optical materials and an increased hysteresis of the strain versus electric field in piezoelectric materials. [ 45 ]…”

Section: Single Crystal Fiber Fabrication Systemmentioning

confidence: 99%

Fabrication and Application of Single Crystal Fiber: Review and Prospective

Liu

Ohodnicki

2021

Adv Materials Technologies

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The state of the art of single crystal fiber (SCF) fabrication has evolved and improved over the last five decades. Nowadays, edge‐defined film‐feed growth, micro‐pulling down, and laser heated pedestal growth are three major techniques for the fabrication of SCF. Solid state crystal growth and temperature gradient technology are also very active recently making small size SCF. These optical fiber growth techniques are powerful material research tools employed globally for both scientific inquiry and practical applications. This article introduces the development of SCF growth techniques, with particular emphasis on recent practical applications including temperature sensing, radiation environment sensing, fiber laser and power delivery, chemical and medical application, imaging application, and piezoelectric application. In all cases, the application‐oriented point of view provides the reader with an up‐to‐date panorama of the vast possibilities offered by SCF. In the end, perspectives on the trends and future development of single crystal fibers are discussed.

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Section: Single Crystal Fiber Fabrication Systemmentioning

confidence: 99%

Fabrication and Application of Single Crystal Fiber: Review and Prospective

Liu

Ohodnicki

2021

Adv Materials Technologies

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“…For the growth of single crystal, various conventional melt growth methods have been established, such as flux growth, top seeded solution growth, and Bridgman method, etc. 5 However, it is difficult to grow PZT single crystal using the above methods because the transition from liquid phase to a PZT solid solution exists the segregation of ZrO 2 . 6 Fortunately, solid-state crystal growth (SSCG) has emerged as a promising method for growth of complex, refractive component, incongruently melting systems with high volatility.…”

Section: Introductionmentioning

confidence: 99%

“…10 The orientation of the seed crystal has a strong impact on the single crystal growth behavior. 5 11 Seabaugh et al 12 reported extreme anisotropy of growth and growth behavior in the alumina system with rate controlling mechanism of diffusion through the liquid grain boundary phase and proposed that the concept of solubility of a specific crystal surface is dependent on crystal orientation. Messing et al 13 explained the crystal growth kinetics of PMN-PT grown on [001]c-, [110]c-, and [111]c-oriented BaTiO 3 seed crystals using the differences in localized solubility along various crystal planes relative to the matrix solubility, which was proposed by Seabaugh et al and Rheinheimer et al 14 However, the growth kinetics PZT single crystal with different orientation of seed crystal by SSCG has not been reported.…”

Section: Introductionmentioning

confidence: 99%

Anisotropic growth kinetics and electric properties of PZT‐5H single crystal by solid‐state crystal growth method

Wang

Xia

et al. 2022

J Am Ceram Soc

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The PZT-5H single crystal growth on [111]c-, [110]c-, and [001]c-oriented seed crystal by solid-state crystal growth (SSCG) method was investigated. The growth rate of PZT-5H single crystal strongly depends on seed crystal orientation and annealing time. The mean growth distance is 682, 620, and 93 μm for [111]c-, [110]c-, and [001]c-oriented PZT-5H single crystal grown at 1150 • C for 8 h, respectively. The growth kinetics of SSCG-grown PZT-5H single crystal was discussed. It is found that the growth of single crystal is driven by the solubility difference between the matrix grains and single crystal growth front interface, arising from the local curvature and the crystallographic directions dependent solubility. The 3238

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“…The grains of KNN-based ceramics exhibit a faceted cube shape, signifying their very high interfacial energy anisotropy [ 28 , 29 , 30 ]. The faceted grain boundary makes normal grain growth difficult, owing to the absence of kink sites for the adsorption of atoms, which is associated with the low sinterability of KNN-based ceramics.…”

Section: Introductionmentioning

confidence: 99%

“…The faceted grain boundary makes normal grain growth difficult, owing to the absence of kink sites for the adsorption of atoms, which is associated with the low sinterability of KNN-based ceramics. The grain growth of ceramics with faceted grain boundaries can be enabled by 2D nucleation and growth mechanisms [ 28 , 29 , 31 ]. The critical driving force (ΔG C ) for the formation of 2D nuclei on the grain surface is expressed as

where ε is the step free energy of the 2D nucleus, Ω is the molar volume, k is Boltzmann’s constant, T is the temperature, and h is the height of the 2D nucleus.…”

Section: Introductionmentioning

confidence: 99%

Grain Growth Behavior and Electrical Properties of 0.96(K0.46−xNa0.54−x)Nb0.95Sb0.05O3–0.04Bi0.5(Na0.82K0.18)0.5ZrO3 Ceramics

et al. 2022

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This study investigated the causes of microstructural changes and the resultant electrical properties according to the sintering temperature of 0.96(K0.46−xNa0.54−x)Nb0.95Sb0.05O3-0.04Bi0.5(Na0.82K0.18)0.5ZrO3 lead-free ceramics by analyzing the correlation between vacancy concentrations and 2D nucleation. When sintered for 4 h, no grain growth occurred for the x = 0.000 composition over a wide temperature range, demonstrating that the existence of initial vacancies is essential for grain growth. As x increased, that is, as the vacancy concentration increased, the critical driving force (ΔGC) for 2D nucleation decreased, and abnormal grain growth was promoted. The number and size of these abnormal grains increased as the sintering temperature increased, but at sintering temperatures above 1100 °C, they decreased again owing to a large drop in ΔGC. The x = 0.005 specimen sintered at 1085 °C exhibited excellent piezoelectric properties of d33 = 498 pC/N and kp = 0.45 due to the large number of large abnormal grains with an 83% tetragonal phase fraction. The x = 0.000 specimen sintered at 1130 °C with suppressed grain growth exhibited good energy storage properties because of its very high relative density and small grain size of 300 to 400 nm.

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Solid-state crystal growth of lead-free ferroelectrics

Abstract: Review article of the solid-state crystal growth (SSCG) technique and the progress of lead-free ferroelectric single crystals for piezoelectric applications.

Cited by 31 publications

References 566 publications

Fabrication and Application of Single Crystal Fiber: Review and Prospective

Fabrication and Application of Single Crystal Fiber: Review and Prospective

Anisotropic growth kinetics and electric properties of PZT‐5H single crystal by solid‐state crystal growth method

Grain Growth Behavior and Electrical Properties of 0.96(K0.46−xNa0.54−x)Nb0.95Sb0.05O3–0.04Bi0.5(Na0.82K0.18)0.5ZrO3 Ceramics

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