2019
DOI: 10.1002/chem.201903897
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Solid Solutions of Grimm–Sommerfeld Analogous Nitride Semiconductors II‐IV‐N2 (II=Mg, Mn, Zn; IV=Si, Ge): Ammonothermal Synthesis and DFT Calculations

Abstract: Grimm–Sommerfeld analogous II‐IV‐N2 nitrides such as ZnSiN2, ZnGeN2, and MgGeN2 are promising semiconductor materials for substitution of commonly used (Al,Ga,In)N. Herein, the ammonothermal synthesis of solid solutions of II‐IV‐N2 compounds (II=Mg, Mn, Zn; IV=Si, Ge) having the general formula (IIa 1−xIIb x)‐IV‐N2 with x≈0.5 and ab initio DFT calculations of their electronic and optical properties are presented. The ammonothermal reactions were conducted in custom‐built, high‐temperature, high‐pressure autocl… Show more

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Cited by 15 publications
(20 citation statements)
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References 62 publications
(156 reference statements)
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“…The observed absorption bands in the spectra of ZnSiN 2 and MnSiN 2 were primarily attributed to direct transitions due to the similarity of direct and indirect bandgaps in the materials , . Direct transitions for the solid solutions were assumed according to previously reported DFT calculations . The bandgap of the boundary phases ZnSiN 2 (3.7 eV), and MnSiN 2 (3.4 eV) are well between the range expected from literature,, and the bandgap of the solid solution Zn 1– x Mn x SiN 2 is linearly decreasing with increasing x .…”
Section: Resultssupporting
confidence: 61%
See 1 more Smart Citation
“…The observed absorption bands in the spectra of ZnSiN 2 and MnSiN 2 were primarily attributed to direct transitions due to the similarity of direct and indirect bandgaps in the materials , . Direct transitions for the solid solutions were assumed according to previously reported DFT calculations . The bandgap of the boundary phases ZnSiN 2 (3.7 eV), and MnSiN 2 (3.4 eV) are well between the range expected from literature,, and the bandgap of the solid solution Zn 1– x Mn x SiN 2 is linearly decreasing with increasing x .…”
Section: Resultssupporting
confidence: 61%
“…Secondly, ZnSiN 2 has been synthesized as deposited thin films by metalorganic vapor phase epitaxy (MOVPE) or molecular beam epitaxy (MBE) techniques . Thirdly, ZnSiN 2 is accessible by an ammonothermal approach using super‐critical ammonia as the solvent at 600 °C in custom made autoclaves , …”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4][5] The ammonothermal technique gainedf undamentali nterest in materials science as it facilitates the growth of high-quality GaN single crystalsu pt o 50 mm in diameter with growth rates of several hundred mm per day. [10][11][12][13][14][15] Applyingt he ammonothermal technique, even the challenging preparation of afew nitridophosphates has been accomplished successfully as reportedf or K 3 P 6 N 11 andt he double nitrides Mg 2 PN 3 and Zn 2 PN 3 . [10][11][12][13][14][15] Applyingt he ammonothermal technique, even the challenging preparation of afew nitridophosphates has been accomplished successfully as reportedf or K 3 P 6 N 11 andt he double nitrides Mg 2 PN 3 and Zn 2 PN 3 .…”
Section: Introductionmentioning
confidence: 99%
“…Recent explorative syntheses under ammonothermal conditions made crystalline wurtzite‐type Grimm–Sommerfeld analogous nitrides available, such as InN, II‐IV‐N 2 compounds (II=Mg, Mn, Zn; I V =Si, Ge) and CaGaSiN 3 , as well as oxide nitride perovskites such as LnTaON 2 (Ln=La, Ce, Pr, Nd, Sm, Gd) . Applying the ammonothermal technique, even the challenging preparation of a few nitridophosphates has been accomplished successfully as reported for K 3 P 6 N 11 and the double nitrides Mg 2 PN 3 and Zn 2 PN 3 .…”
Section: Introductionmentioning
confidence: 99%
“…InN, II‐IV‐N 2 (II = Mg, Mn, Zn; IV = Si, Ge), CaGaSiN 3 or Ca 1– x Li x Al 1– x Ge 1+ x N 3 ( x ≈ 0.2)] and oxide nitride perovskites [e.g. EAM O 2 N ( EA = Sr, Ba; M = Nb, Ta)] as well . Most recently, the syntheses of numerous nitridophosphates with different degrees of condensations κ (i.e.…”
Section: Introductionmentioning
confidence: 99%