Solid-Phase Reaction of Ni with Amorphous SiGe Thin Film on SiO₂

Abstract

An accelerated random sequential adsorption process is studied as a model of chemisorption on a line with precursor layer diffusion. In this process if the position first selected for deposition is occupied then the particle diffuses and is absorbed on the first vacant position it visits. For k-mer deposition exact results are obtained for the gap distribution function. Physically measurable quantities such as the average island size and the probabilities of island nucleation, growth and coagulation are calculated as a function of coverage and the saturation coverage is calculated as a function of k. The continuum version of this model is also considered and potential applications of the models are discussed. §

Effects of the Second Step Annealing Time and Temperature in Two Steps Annealing on Low Temperature Poly-Silicon Film Fabrication

“…Jin et al [13] reported the peak intensity of Si-Si bond in Raman spectra falls between 499-520 cm . Fig.8 shows the Raman spectra variations of 5 different annealing temperatures under the annealing temperature of 450°C and 500 'C.…”

The Effects of Nanometal-Induced Crystallization on the Electrical Characteristics of Bottom-Gate Poly-Si Thin-Film Transistors

“…Scientific reports on the MIC of a-Si, amorphous Ge (a-Ge), or amorphous SiGe (a-SiGe) when coming in contact with certain metals appeared in the early 1970s 14 15 or was studied with double layers of amorphous semiconductors [16][17][18][19][20] and metals/implanted metal. [21][22][23] There are two kinds of mechanisms explaining the metal-induced-crystallized a-Si: one dependent on the silicide formation metal (e.g., Pd and Ni) 24 and the other with no need for silicide formation (e.g., Al, 25 Ag, and Au).…”

Self-assembled nickel–phosphorus micro-dot arrays deposited by non-isothermal deposition method

“…Metal dot-arrays have been widely used in areas such as optical devices [1,2], DNA or protein electrophoresis [3], metal induced low-temperature growth of poly-silicon substrate of TFT-LCD [4,5], and catalysts for CNT growth [6][7][8]. The need to develop nano-sized dot arrays has increased tremendously during the last decade due to their excellent quantum effect, physical and chemical properties.…”