Solid Phase Epitaxy of Ferromagnetic MnAs Layer and Quantum Dots on Annealed GaMnAs

Abstract

We show that post growth annealing of GaMnAs under As capping at temperatures in the range of 180−210• C leads to significant surface modifications. Depending on GaMnAs layer thickness and composition, we obtain either a smooth continuous reacted (MnAs) surface layer or 3D islands (quantum dots). The surface modifications are due to a solid phase epitaxial process, in which Mn interstitials diffusing to the GaMnAs surface are bound with the As.