Solid phase epitaxial growth of high mobility La:BaSnO3 thin films co-doped with interstitial hydrogen

Abstract

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Thermopower modulation clarification of the intrinsic effective mass in transparent oxide semiconductor BaSnO3

“…Generally, the τ value of epitaxial films is smaller than that of the bulk single crystal due to the fact that the carrier electrons are scattered at dislocations, which originated from the lattice mismatch (δ) and at other structural defects, in addition to optical phonon scattering. [12], and experimental values of 3.7m 0 [13], 0.61m 0 [14], ∼0.35m 0 [15], ∼0.396m 0 [16], 0.27 ± 0.05m 0 [10], 0.19 ± 0.01m 0 [8]). Consequently, determining the intrinsic m * value is almost impossible.…”

Electron effective mass and mobility limits in degenerate perovskite stannateBaSnO3

“…for device applications, current research concentrates on understanding and improving the electron transport in epitaxial La:BaSnO 3 thin films [7][8][9][10][11][12][13][14].…”

“…Since the report of an extraordinary high room temperature mobility of 320 cm 2 /Vs for La:BaSnO 3 single crystals [1], which is the highest value reported for perovskite oxides, the material has rapidly attracted interest as high-mobility channel layer in oxide thin film transistors [2][3][4] and multi-functional perovskite-based optoelectronic devices [5,6]. To fully exploit the potential of La:BaSnO 3for device applications, current research concentrates on understanding and improving the electron transport in epitaxial La:BaSnO 3 thin films [7][8][9][10][11][12][13][14].La:BaSnO 3 thin films grown heteroepitaxially on SrTiO 3 substrates using pulsed laser rier scattering mechanism in BaSnO 3 is still lacking and would provide a guideline for improving the electron transport beyond the current mobility limits of epitaxial films.The high mobility in La:BaSnO 3 single crystals is attributed to the large dispersion of the Sn 5s orbital-derived conduction band and the ideal 180• O−Sn−O bond angle in the network of corner sharing (SnO 6 ) 2− octahedra in the cubic perovskite structure [15].Quantitatively, the electron mobility is given bywhere e is the electron charge, m * e is the electron effective mass and τ is the relaxation time Fig. 1(a)).…”

“…Since the report of an extraordinary high room temperature mobility of 320 cm 2 /Vs for La:BaSnO 3 single crystals [1], which is the highest value reported for perovskite oxides, the material has rapidly attracted interest as high-mobility channel layer in oxide thin film transistors [2][3][4] and multi-functional perovskite-based optoelectronic devices [5,6]. To fully exploit the potential of La: BaSnO 3 for device applications, current research concentrates on understanding and improving the electron transport in epitaxial La:BaSnO 3 thin films [7][8][9][10][11][12][13][14].…”

Photoconductivity of CaH2-reduced BaSnO3 thin films

“…Based on aforementioned XRD analysis, it is understandable that the resistivity of BSO-V lm is smaller than that of as-grown BSO lm due to oxygen vacancies. While for BSO-H thin lm, it is believable that the H À charge transition level lies virtually constant at $4.5 eV below the vacuum level, 12,29,30 and thus easily form a shallow donor inside the conduction band of BSO lm, resulting in highly conductive performance. On the other hand, the electrical property of interstitial H doping BSO thin lm can be reversible through high vacuum annealing (i.e., from conductor to insulator), 12 whereas the BSO-H thin lm is still conductive at 300 K, even annealed under high vacuum at 600 C (see the inset of Fig.…”