Solid‐Phase Crystallization of GeSn Thin Films on GeO₂‐Coated Glass

Abstract

In article number http://doi.wiley.com/10.1002/pssr.202100509, Kaoru Toko and co‐workers illustrate how oxygen diffusion from the GeO2 layer during crystallization enables the synthesis of GeSn layers with large grains, which considerably reduces acceptor defects while maintaining a high hole mobility. These achievements will pave the way for advanced Ge‐based thin‐film transistors.