Solar Cells With 15.6% Efficiency on Multicrystalline Silicon, Using Impurity Gettering, Back Surface Field and Emitter Passivation

Nam, Le Quang; Rodot, M.; Ghannam, M.Y.; Coppye, J.; Schepper, Peter De; Nijs, Johan; Sarti, D.; Perichaud, I.; Martinuzzi, S.

doi:10.1080/01425919208909745

Cited by 23 publications

(17 citation statements)

References 3 publications

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“…The solar cell (n + -p-p + ) or (p + -p-n + ) has been widely studied [1] [2] [3] [4] for the determination of the phenomenological parameters of minority charge carriers in the base [5] which are: lifetime, diffusion length and surface recombination velocity. The illumination of the solar cell is monochromatic [6] [7] or composite [8] [9] [10], arriving perpendicularly on the front or rear face (bifacial), or laterally for the series vertical multi junctions [11].…”

Section: Introductionmentioning

confidence: 99%

Back Surface Recombination Velocity Dependent of Absorption Coefficient as Applied to Determine Base Optimum Thickness of an n+/p/p+ Silicon Solar Cell

Dede¹,

Ba²,

Ba³

et al. 2020

EPE

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The monochromatic absorption coefficient of silicon, inducing the light penetration depth into the base of the solar cell, is used to determine the optimum thickness necessary for the production of a large photocurrent. The absorption-generation-diffusion and recombination (bulk and surface) phenomena are taken into account in the excess minority carrier continuity equation. The solution of this equation gives the photocurrent according to absorption and electronic parameters. Then from the obtained short circuit photocurrent expression, excess minority carrier back surface recombination velocity is determined, function of the monochromatic absorption coefficient at a given wavelength. This latter plotted versus base thickness yields the optimum thickness of an n + -p-p + solar cell, for each wavelength, which is in the range close to the energy band gap of the silicon material. This study provides a tool for improvement solar cell manufacture processes, through the mathematical relationship obtained from the thickness limit according to the absorption coefficient that allows base width optimization.

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Section: Introductionmentioning

confidence: 99%

Back Surface Recombination Velocity Dependent of Absorption Coefficient as Applied to Determine Base Optimum Thickness of an n+/p/p+ Silicon Solar Cell

Dede¹,

Ba²,

Ba³

et al. 2020

EPE

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“…The excess minority carrier recombination velocity Sb on the back surface is associated with the p/p + junction which generates an electric field, for throwing back the charge carrier toward the junction [14] [15] [36] and then increases their collection.…”

Section: Theoretical Modelementioning

confidence: 99%

AC Back Surface Recombination Velocity in n<sup>＋</sup>-p-p<sup>＋</sup> Silicon Solar Cell under Monochromatic Light and Temperature

Fall¹,

Gaye²,

Diarisso³

et al. 2021

JEMAA

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Excess minority carrier's diffusion equation in the base of monofaciale silicon solar cell under frequency modulation of monochromatic illumination is resolved. Using conditions at the base limits involving recombination velocities Sf and Sb, respectively at the junction (n + /p) and back surface (p + /p), the AC expression of the excess minority carriers' density δ (T, ω) is determined. The AC density of photocurrent J ph (T, ω) is represented versus recombination velocity at the junction for different values of the temperature. The expression of the AC back surface recombination velocity Sb of minority carriers is deduced depending on the frequency of modulation, temperature, the electronic parameters (D (ω)) and the thickness of the base. Bode and Nyquist diagrams are used to analyze it.

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“…We present in figure 1 the diagram of an(n + -p-p + ) polycrystalline silicon solar cell [8,12] under irradiated with charged particules(kl, ϕp) and remained under magnetic field (B) and temperature (T), it is then illuminad with polychromatic light in frequency modulation.…”

Section: Theory Presentation Of Solar Cellmentioning

confidence: 99%

Minority Carriers Mobility Determination in the Base Region of N+-P-P+ Silicon Solar Cell Under Effects of Irradiation Flux, Temperature and Magnetic Field

Traore¹,

Gaye²,

Mballo³

et al. 2021

IJAR

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The aim of this study is to show the influence of temperature on the relative value of the short-circuit photocurrent density obtained from an n+-p-p+silicon solar cell front illuminated with modulated polychromatic light. The solar cell was already subjected to charged particules irradiation flux (ÃŽÂ¦p) and intensity (kl,) and remained under both magnetic field (B) and temperature (T). Thus, the graphical representation of the relative value of the short-circuit photocurrent density as a function of the square of the magnetic field (B) yields to determine the slope, which is related to the mobility of minority carriers in the base. It is obtained for a back surface field silicon solar cellunder both temperature and irradiation flux of charged particules.

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Solar Cells With 15.6% Efficiency on Multicrystalline Silicon, Using Impurity Gettering, Back Surface Field and Emitter Passivation

Cited by 23 publications

References 3 publications

Back Surface Recombination Velocity Dependent of Absorption Coefficient as Applied to Determine Base Optimum Thickness of an n+/p/p+ Silicon Solar Cell

Back Surface Recombination Velocity Dependent of Absorption Coefficient as Applied to Determine Base Optimum Thickness of an n+/p/p+ Silicon Solar Cell

AC Back Surface Recombination Velocity in n<sup>＋</sup>-p-p<sup>＋</sup> Silicon Solar Cell under Monochromatic Light and Temperature

Minority Carriers Mobility Determination in the Base Region of N+-P-P+ Silicon Solar Cell Under Effects of Irradiation Flux, Temperature and Magnetic Field

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Solar Cells With 15.6% Efficiency on Multicrystalline Silicon, Using Impurity Gettering, Back Surface Field and Emitter Passivation

Cited by 23 publications

References 3 publications

Back Surface Recombination Velocity Dependent of Absorption Coefficient as Applied to Determine Base Optimum Thickness of an n+/p/p+ Silicon Solar Cell

Back Surface Recombination Velocity Dependent of Absorption Coefficient as Applied to Determine Base Optimum Thickness of an n+/p/p+ Silicon Solar Cell

AC Back Surface Recombination Velocity in n&lt;sup&gt;＋&lt;/sup&gt;-p-p&lt;sup&gt;＋&lt;/sup&gt; Silicon Solar Cell under Monochromatic Light and Temperature

Minority Carriers Mobility Determination in the Base Region of N+-P-P+ Silicon Solar Cell Under Effects of Irradiation Flux, Temperature and Magnetic Field

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AC Back Surface Recombination Velocity in n<sup>＋</sup>-p-p<sup>＋</sup> Silicon Solar Cell under Monochromatic Light and Temperature