Solar Cells Noise Diagnostic and LBIC Comparison

In this paper we present the comparisons of noise spectroscopy, I-V characteristic and microplasma detection of silicon concentrator photovoltaic (CPV) cell with very high efficiency. Efficiency reaches to 38 %. We studied two groups with different technologies (A and B). Each group had 6 samples. The samples were quality screened using noise analysis. From the measurement results it follows that the noise spectral density related to defects is of 1/f or generation-recombination types. G-R noise and burst noise is not fundamental noise and therefore can by use as a quality indicator.

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Section: Introductionmentioning

confidence: 99%

Low-Frequency Noise Diagnostic of Silicon Concentrator Photovoltaic Cell with Very High Efficiency

2015

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“…For materials analysis, lifetimemapping tools such as surface photo voltage (SPV) [7], microwave photo conductance decay (MW PCD) [8] are frequently applied. Other methods map spatial distribution of photocurrent induced by laser beam (LBIC) [9], or by electron beam-induced current (EB-IC) [10] over whole wafer.…”

Section: Introductionmentioning

confidence: 99%

Detection and Localization of Defects in Monocrystalline Silicon Solar Cell

Tománek

Škarvada

Macků

et al. 2010

Advances in Optical Technologies

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Near-surface defects in solar cell wafer have undesirable influence upon device properties, as its efficiency and lifetime. When reverse-bias voltage is applied to the wafer, a magnitude of electric signals from defects can be measured electronically, but the localization of defects is difficult using classical optical far-field methods. Therefore, the paper introduces a novel combination of electric and optical methods showing promise of being useful in detection and localization of defects with resolution of 250 nm using near-field nondestructive characterization techniques. The results of mapped topography, local surface reflection, and local light to electric energy conversion measurement in areas with small defects strongly support the development and further evaluation of the technique.

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“…The defects are the natural sources of the excess current and the excess noise and they are responsible for the changes of several measurable quantities. Physical processes in electronic devices can give a useful piece of information on the device reliability provided there is a correlation with failure mechanism [6][7][8][9][10][11][12]. It is known that most of failures in the flat region of the "bathtub curve" of the failure rate result from the latent defects created during the manufacture processes or during the operating life of the devices.…”

Section: Introductionmentioning

confidence: 99%

Low–Frequency Noise Measurements Used For Quality Assessment Of GaSb Based Laser Diodes Prepared By Molecular Beam Epitaxy

Chobola

Lunak

Vaněk

et al. 2015

Journal of Electrical Engineering

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The paper reports on a non-destructive method of reliability prediction for semiconductor lasers diodes GaSb based VCSE (vertical cavity surface emitting). Transport and noise characteristic of forward biased were measured in order to evaluate the new MBE (molecular beam epitaxy) technology. The results demonstrate that the lasers prepared by new MBE technology have higher quality than the samples prepared by using the classic MBE technology.

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Solar Cells Noise Diagnostic and LBIC Comparison

Cited by 8 publications

References 1 publication

Low-Frequency Noise Diagnostic of Silicon Concentrator Photovoltaic Cell with Very High Efficiency

Low-Frequency Noise Diagnostic of Silicon Concentrator Photovoltaic Cell with Very High Efficiency

Detection and Localization of Defects in Monocrystalline Silicon Solar Cell

Low–Frequency Noise Measurements Used For Quality Assessment Of GaSb Based Laser Diodes Prepared By Molecular Beam Epitaxy

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