Solar cells and submodules on CIS prepared by EDCF method

Arya, R.R.; Lommasson, T.; Wiedeman, S.; Russell, L.; Skibo, S.; Fogleboch, J.

doi:10.1109/pvsc.1993.347127

Cited by 7 publications

(7 citation statements)

References 2 publications

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“…It is important to note that an increase in gallium concentration resulted in a significant decrease in the average grain size of the film. This observation is in good agreement with other related studies [13][14][15]. Figure 2(a) depicts XRD patterns of the precursor and selenized thin films with different gallium incorporations (x = 0.02, 0.22, and 0.35).…”

Section: Morphological Propertiessupporting

confidence: 91%

Morphological, Structural, and Optical Properties of Single-Phase Cu(In,Ga)Se₂Thin Films from the Selenization of Thermally Evaporated InSe/Cu/GaSe Precursors

Dejene

2014

Advances in Materials Science and Engineering

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The relatively small band gap values (~1 eV) of CuInSe2thin films limit the conversion efficiencies of completed CuInSe2/CdS/ZnO solar cell devices. In the case of traditional two-stage growth techniques, limited success has been achieved to homogeneously increase the band gap by substituting indium with gallium. In this study, thermal evaporation of InSe/Cu/Gase precursors was exposed to an elemental Se vapour under defined conditions. This technique produced large-grained, single-phase Cu(In,Ga)Se2thin films with a high degree of in-depth compositional uniformity. The selenization temperature, ramp time, reaction period, and the effusion cell temperature with respect to the Cu(In,Ga)Se2films were optimized in this study. The homogeneous incorporation of Ga into CuInSe2led to a systematic shift in the lattice spacing parameters and band gap of the absorber films. Under optimized conditions, gallium in cooperation resulted only in a marginal decrease in the grain size, X-ray diffraction studies confirmed single-phase Cu(In,Ga)Se2material, and X-ray photoluminescence spectroscopy in-depth profiling revealed a uniform distribution of the elements through the entire depth of the alloy. From these studies optimum selenization conditions were determined for the deposition of homogeneous Cu(In,Ga)Se2thin films with optimum band gap values between 1.01 and 1.21 eV.

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Section: Morphological Propertiessupporting

confidence: 91%

Morphological, Structural, and Optical Properties of Single-Phase Cu(In,Ga)Se₂Thin Films from the Selenization of Thermally Evaporated InSe/Cu/GaSe Precursors

Dejene

2014

Advances in Materials Science and Engineering

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“…Furthermore, these results show that the Cu/In ratio increases after selenization. This is consistent with an In-loss mechanism in which In 2 Se is the volatile compound [15]. The CIS thin film with over all In-rich composition is the best for CIS solar cells [16].…”

Section: Compositionsupporting

confidence: 79%

Preparation of CuInSe2 films by ultrasonic electrodeposition-selenization and the improvement of their surface morphology

2010

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The CuInSe 2 compound was prepared by selenization of Cu-In precursor, which was ultrasonic electrodeposited at constant current. CuInSe 2 films were compacted to improve surface morphology. The films were characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS). It is indicated that ideal stoichiometric CuInSe 2 films can be obtained by the selenization of Cu-In precursor deposited at a current density of 20 mA/cm 2 . Single-phase CuInSe 2 is formed in the selenization process, and it exhibits preferred orientation along the (112) plane. The CuInSe 2 films with smooth surface can be obtained under the pressure of 500 MPa at 60°C.

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“…structures are all absent. This is fully in accordance with the systematic structural change from chalcopyrite to sphalerite [3][4][5][6][7][8][9][10][11] The tetragonal chalcopyrite has a c/a ratio 11.562 /5.762 = 2.005. The displacement of (112) peak is observed to be merely 0.475° [2].…”

supporting

confidence: 77%

“…Both the band gap and the lattice constants can be adjusted by substituting the other group I, lll and VI elements into the structure [3]. Some characterization of CulnSe2 thin films and bulk crystals has been carried out [5][6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Crystallographic Parameter and Optical Absorption Measurement of CuInSe<sub>2</sub> Thin Films for Solar Cells

Albassam

Elani

2014

AMR

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Thin films CuInSe2(CIS) cells have been fabricated by the electro chemical method. Some of the physical properties such as lattice parameter, crystal structure and grain size of CuInSe2(CIS) films with different Cu/In ratios ( 0.50-1.1) were determined using X-ray diffractornetry. The surface morphology with different Cu/In ratios was studied using a scanning electron microscope. The SEM studies on these films showed that the grain size increases the Cu/In ratios increases from 0.49 to 1.1. The variation of the band gap with different Cu/In ratio was determined from optical absorption measurements. The results showed that the band gap decreases as the Cu/In ratio increases over the considered range of composition. Key words: Thin films, Lattice Parameter , Optical Absorption, grain size

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Solar cells and submodules on CIS prepared by EDCF method

Cited by 7 publications

References 2 publications

Morphological, Structural, and Optical Properties of Single-Phase Cu(In,Ga)Se₂Thin Films from the Selenization of Thermally Evaporated InSe/Cu/GaSe Precursors

Morphological, Structural, and Optical Properties of Single-Phase Cu(In,Ga)Se₂Thin Films from the Selenization of Thermally Evaporated InSe/Cu/GaSe Precursors

Preparation of CuInSe2 films by ultrasonic electrodeposition-selenization and the improvement of their surface morphology

Crystallographic Parameter and Optical Absorption Measurement of CuInSe<sub>2</sub> Thin Films for Solar Cells

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Solar cells and submodules on CIS prepared by EDCF method

Cited by 7 publications

References 2 publications

Morphological, Structural, and Optical Properties of Single-Phase Cu(In,Ga)Se2Thin Films from the Selenization of Thermally Evaporated InSe/Cu/GaSe Precursors

Morphological, Structural, and Optical Properties of Single-Phase Cu(In,Ga)Se2Thin Films from the Selenization of Thermally Evaporated InSe/Cu/GaSe Precursors

Preparation of CuInSe2 films by ultrasonic electrodeposition-selenization and the improvement of their surface morphology

Crystallographic Parameter and Optical Absorption Measurement of CuInSe<sub>2</sub> Thin Films for Solar Cells

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Morphological, Structural, and Optical Properties of Single-Phase Cu(In,Ga)Se₂Thin Films from the Selenization of Thermally Evaporated InSe/Cu/GaSe Precursors

Morphological, Structural, and Optical Properties of Single-Phase Cu(In,Ga)Se₂Thin Films from the Selenization of Thermally Evaporated InSe/Cu/GaSe Precursors