“…Different post-treatments of overall device have been conducted to advance the PSCs, such as thermal, moisture, and organic vapor post-treatment. For the thermal post-treatment, postannealing for CsPbI 2 Br PSCs was carried out at 70 °C for 30 min under a N 2 environment, leading to remarkable improvement of PCE and thermal stability along with shelf stability, while postvacuum annealing at 150 °C improved the morphology of the C 2 SnI 6 film and thus the device V oc as well as the structural stability. , Also, a slow postannealing method was applied to butylamine (BA)-based BA 2 MA 3 Pb 4 I 13 ( n = 4) 2D PSCs at 60 °C for 60 h in a N 2 atmosphere, causing better crystal orientation and preferable alignment of the multiple perovskite phases, accelerating charge extraction and transport, mitigating recombination, and thus enhancing both PCE and the stability tested under a N 2 environment . Another post-treatment method for the overall device is the humidity-assisted thermal exposure (HTE) post-treatment method, which combines contributions of moisture and heat to device improvement through the exposure of overall device under 70 ± 5% humidity at 40 °C in an automated weather chamber, improving the interfaces of different layers and the crystallinity, and resulting in an impressive light stability .…”