2020
DOI: 10.1016/j.solener.2020.06.101
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Solar cell using spray casted Cs2SnI6 perovskite thin films on chemical bath deposited CdS yielding high open circuit voltage

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Cited by 38 publications
(22 citation statements)
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“…Different post-treatments of overall device have been conducted to advance the PSCs, such as thermal, moisture, and organic vapor post-treatment. For the thermal post-treatment, postannealing for CsPbI 2 Br PSCs was carried out at 70 °C for 30 min under a N 2 environment, leading to remarkable improvement of PCE and thermal stability along with shelf stability, while postvacuum annealing at 150 °C improved the morphology of the C 2 SnI 6 film and thus the device V oc as well as the structural stability. , Also, a slow postannealing method was applied to butylamine (BA)-based BA 2 MA 3 Pb 4 I 13 ( n = 4) 2D PSCs at 60 °C for 60 h in a N 2 atmosphere, causing better crystal orientation and preferable alignment of the multiple perovskite phases, accelerating charge extraction and transport, mitigating recombination, and thus enhancing both PCE and the stability tested under a N 2 environment . Another post-treatment method for the overall device is the humidity-assisted thermal exposure (HTE) post-treatment method, which combines contributions of moisture and heat to device improvement through the exposure of overall device under 70 ± 5% humidity at 40 °C in an automated weather chamber, improving the interfaces of different layers and the crystallinity, and resulting in an impressive light stability .…”
Section: Process Engineeringmentioning
confidence: 99%
“…Different post-treatments of overall device have been conducted to advance the PSCs, such as thermal, moisture, and organic vapor post-treatment. For the thermal post-treatment, postannealing for CsPbI 2 Br PSCs was carried out at 70 °C for 30 min under a N 2 environment, leading to remarkable improvement of PCE and thermal stability along with shelf stability, while postvacuum annealing at 150 °C improved the morphology of the C 2 SnI 6 film and thus the device V oc as well as the structural stability. , Also, a slow postannealing method was applied to butylamine (BA)-based BA 2 MA 3 Pb 4 I 13 ( n = 4) 2D PSCs at 60 °C for 60 h in a N 2 atmosphere, causing better crystal orientation and preferable alignment of the multiple perovskite phases, accelerating charge extraction and transport, mitigating recombination, and thus enhancing both PCE and the stability tested under a N 2 environment . Another post-treatment method for the overall device is the humidity-assisted thermal exposure (HTE) post-treatment method, which combines contributions of moisture and heat to device improvement through the exposure of overall device under 70 ± 5% humidity at 40 °C in an automated weather chamber, improving the interfaces of different layers and the crystallinity, and resulting in an impressive light stability .…”
Section: Process Engineeringmentioning
confidence: 99%
“…The device includes all-inorganic photovoltaic structures of FTO/CdS/Cs 2 SnI 6 /C/Ag, and delivered a maximum V OC of 0.86 V after post-thermal annealing of the device at 150 °C. [140] 4.2. Cs 2 TiX 6…”
Section: Cs 2 Nabixmentioning
confidence: 99%
“…Copyright 2017, Elsevier. Panel (e-g) is reproduced with permission [140]. Copyright 2020, Elsevier.…”
mentioning
confidence: 99%
“…23,24 However, the instability of these materials remains an issue due to the oxidization of their bivalent cations to tetravalent ones (e.g., Ge 4+ and Sn 4+ ) under ambient conditions. 25 Alternatively, perovskites with the chemical formulas of Cs 3 M(III) 2 X 9 and Cs 2 M(IV)X 6 have been synthesized, where X represents a halogen element; M(III) and M(IV) are trivalent cations (for instance, Bi 3+ and Sb 3+ ) [26][27][28] and tetravalent cations (for instance, Sn 4+ and Ti 4+ ), [29][30][31] respectively. Although this yields long-term stability, an isolated network of metal halide octahedral units is generated in these compounds, which results in low charge mobility and indirect bandgap.…”
Section: Introductionmentioning
confidence: 99%