Abstract:Solar energy is considered as a potential alternative energy source. The solar cell is classified into three main types: i) solar cells based on bulk silicon materials (monocrystalline, polycrystalline), ii) thin‐film solar cells (CIGS, CdTe, DSSC, etc.), and iii) solar cells based on nanostructures and nanomaterials. Nowadays, commercial solar cells are usually made by bulk silicon material, which requires not only high fabrication costs but also limited performance. In this study, the fabrication of high‐per… Show more
“…As mentioned earlier, the p-type doping increases the work function of graphene and intensifies the built-in potential which results in higher PCE. [113][114][115][116][117][118][119] Since PEDOT: PSS and HNO 3 are p-type dopants for graphene, therefore in this study, the directly grown VGNH were co-doped with PEDOT: PSS and HNO 3 . Hence, the directly grown VGNH on textured-Si exhibited a higher work function of ≈4.7 eV, and consequently a higher PCE, that is, 10.97% was achieved with an active area of 0.9 cm 2 after codoping.…”
Integration of chemical vapor deposited (CVD) graphene with textured‐Si substrates is an emerging research area wide open. Graphene can serve as both a transparent top electrode and a charge‐separating/transport‐active layer. However, its low light absorption capability, and high reflectance of planar‐Si substrate are major concerns for light harvesting required for photovoltaic devices especially solar cells and photodetectors (PDs). Therefore, CVD‐graphene/textured‐Si heterostructure effectively addresses this problem as the textured‐Si provides more surface area for light harvesting by suppressing light reflection and enables the efficient charge separation/transport as well. Recently, CVD‐graphene/textured‐Si Schottky junction based high performance solar cells and PDs have successfully been demonstrated. Moreover, the graphene coating on textured‐Si enhances the conductivity of Si anodes and provides structural stability for lithium‐ion batteries (LIBs). Furthermore, the optoelectronic coupled interfacial properties in such heterostructures suitably construct the platforms for surface enhanced Raman scattering (SERS) based detection and photocathodes for H2‐production, respectively. Hence, in this review, the fabrication of various CVD‐graphene/textured‐Si heterostructures and their applications in solar cells, PDs, SERS, LIBs, and H2‐production are critically analyzed with respect to the synergistic effect of Si‐texturing, electronic/optoelectronic properties of CVD‐graphene, etc. Finally, conclusions and outlook of this rapidly emerging and technologically broad research area are presented.
“…As mentioned earlier, the p-type doping increases the work function of graphene and intensifies the built-in potential which results in higher PCE. [113][114][115][116][117][118][119] Since PEDOT: PSS and HNO 3 are p-type dopants for graphene, therefore in this study, the directly grown VGNH were co-doped with PEDOT: PSS and HNO 3 . Hence, the directly grown VGNH on textured-Si exhibited a higher work function of ≈4.7 eV, and consequently a higher PCE, that is, 10.97% was achieved with an active area of 0.9 cm 2 after codoping.…”
Integration of chemical vapor deposited (CVD) graphene with textured‐Si substrates is an emerging research area wide open. Graphene can serve as both a transparent top electrode and a charge‐separating/transport‐active layer. However, its low light absorption capability, and high reflectance of planar‐Si substrate are major concerns for light harvesting required for photovoltaic devices especially solar cells and photodetectors (PDs). Therefore, CVD‐graphene/textured‐Si heterostructure effectively addresses this problem as the textured‐Si provides more surface area for light harvesting by suppressing light reflection and enables the efficient charge separation/transport as well. Recently, CVD‐graphene/textured‐Si Schottky junction based high performance solar cells and PDs have successfully been demonstrated. Moreover, the graphene coating on textured‐Si enhances the conductivity of Si anodes and provides structural stability for lithium‐ion batteries (LIBs). Furthermore, the optoelectronic coupled interfacial properties in such heterostructures suitably construct the platforms for surface enhanced Raman scattering (SERS) based detection and photocathodes for H2‐production, respectively. Hence, in this review, the fabrication of various CVD‐graphene/textured‐Si heterostructures and their applications in solar cells, PDs, SERS, LIBs, and H2‐production are critically analyzed with respect to the synergistic effect of Si‐texturing, electronic/optoelectronic properties of CVD‐graphene, etc. Finally, conclusions and outlook of this rapidly emerging and technologically broad research area are presented.
“…The enhancement could result from the low reflectance of SiNW structures for enhancing the light absorption and to large p/n junction areas for enhancing the carrier collection efficiency. 39–44 Moreover, the increase in the surface roughness of the devices using SiNWs is shown in Fig. 3c.…”
Section: Resultsmentioning
confidence: 89%
“…The enhancement could result from the low reectance of SiNW structures for enhancing the light absorption and to large p/n junction areas for enhancing the carrier collection efficiency. [39][40][41][42][43][44] Moreover, the increase in the surface roughness of the devices using Table 1 Structure and photovoltaic properties of the hybrid solar cells: short circuit current density (J sc ), open circuit voltage (V oc ), series resistance (R s ), fill factor (FF), and efficiency (PCE)…”
Section: Morphology Of Silicon Nanostructuresmentioning
“…From Table 1, where the highest performing polymer-SiNW hybrid solar cells are tabulated, it is observed that all these solar cells have PEDOT:PSS as a common polymer for SiNW array. Similarly, for each hybrid solar cell the PEDOT:PSS makes radial p-n junction with SiNW array because such radial p-n junction structure efficiently supports both the light absorption and carrier collection perpendicular to each other [41][42][43][44][45][46][47][48].…”
Section: P-n Junction Designmentioning
confidence: 99%
“…Shows the SEM images of side-view and top-view (inset) of SiNW fabricated by chemical etching method. When etching-time is doubled (30 min to 60 min) then the length of SiNW is also double (from 4 µm to 8 µm) but the SiNWs of higher length are agglomerated[48].…”
Among various photovoltaic devices, the poly 3, 4-ethylenedioxythiophene:poly styrenesulfonate (PEDOT:PSS) and silicon nanowire (SiNW)-based hybrid solar cell is getting momentum for the next generation solar cell. Although, the power-conversion efficiency of the PEDOT:PSS–SiNW hybrid solar cell has already been reported above 13% by many researchers, it is still at a primitive stage and requires comprehensive research and developments. When SiNWs interact with conjugate polymer PEDOT:PSS, the various aspects of SiNW array are required to optimize for high efficiency hybrid solar cell. Therefore, the designing of silicon nanowire (SiNW) array is a crucial aspect for an efficient PEDOT:PSS–SiNW hybrid solar cell, where PEDOT:PSS plays a role as a conductor with an transparent optical window just-like as metal-semiconductor Schottky solar cell. This short review mainly focuses on the current research trends for the general, electrical, optical and photovoltaic design issues associated with SiNW array for PEDOT:PSS–SiNW hybrid solar cells. The foremost features including the morphology, surface traps, doping of SiNW, which limit the efficiency of the PEDOT:PSS–SiNW hybrid solar cell, will be addressed and reviewed. Finally, the SiNW design issues for boosting up the fill-factor, short-circuit current and open-circuit voltage will be highlighted and discussed.
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