Solar-blind UV photoelectric properties of pure-phase α-Ga2O3 deposited on m-plane sapphire substrate

Ge, Kunpeng; Meng, Dongdong; Chen, Xu; Wang, Xu; Ji, Xueqiang; Chen, Zhengwei

doi:10.1007/s00339-022-06353-8

Cited by 5 publications

(1 citation statement)

References 29 publications

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“…For a considerable period, researches of the characteristics of α-Ga 2 O 3 for the development of SBUVD were restricted due to the absence of methods to grow high-quality α-Ga 2 O 3 films. SBUVDs developed to date, based on thin films and heterostructures of α-Ga 2 O 3 obtained by mist chemical vapour deposition [16] , laser molecular beam epitaxy [17] , pulse laser deposition [18] , low temperature atomic layer deposition [19] , radio-frequency magnetron sputtering [20] and sol-gel [21] , did not differ in high sensitivity of responsivity R λ but were characterized by relatively high speed performance (low rise τ r and decay τ d times). The challenges in producing high-quality α-Ga 2 O 3 layers likely contribute to the difficulty in developing SBUVDs based on α-Ga 2 O 3 films and heterostructures.…”

Section: Introductionmentioning

confidence: 99%

Self-powered UVC detectors based on α-Ga₂O₃ with enchanted speed performance

Almaev,

Tsymbalov,

Kushnarev

et al. 2024

J. Semicond.

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Detectors were developed for detecting irradiation in the short-wavelength ultraviolet (UVC) interval using high-quality single-crystalline α-Ga2O3 films with Pt interdigital contacts. The films of α-Ga2O3 were grown on planar sapphire substrates with c-plane orientation using halide vapor phase epitaxy. The spectral dependencies of the photo to dark current ratio, responsivity, external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 nm. The maximum of photo to dark current ratio, responsivity, external quantum efficiency, and detectivity of the structures were 1.16 × 104 arb. un., 30.6 A/W, 1.65 × 104%, and 6.95 × 1015 Hz0.5·cm/W at a wavelength of 230 nm and an applied voltage of 1 V. The high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole trapping. The α-Ga2O3 film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga2O3 interfaces. At a wavelength of 254 nm and zero applied voltage, the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2 × 10−2%. The UVC detectors based on the α-Ga2O3 films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.

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Section: Introductionmentioning

confidence: 99%

Self-powered UVC detectors based on α-Ga₂O₃ with enchanted speed performance

Almaev,

Tsymbalov,

Kushnarev

et al. 2024

J. Semicond.

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Ultra-wide single crystal nanobelts of β-Ga2O3 synthesized by carbothermal reduction

Chen

Ma²,

Lü³

et al. 2023

Appl. Phys. A

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Enhancing β-Ga₂O₃-film ultraviolet detectors via RF magnetron sputtering with seed layer insertion on c-plane sapphire substrate

Wang,

Chen

et al. 2023

Nanotechnology

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Gallium oxide (Ga2O3) possesses a band gap of approximately 4.9 eV, aligning its detection wavelength within the solar-blind region, making it an ideal semiconductor material for solar-blind photodetectors. This study aims to enhance the performance of Ga2O3 ultraviolet (UV) detectors by pre-depositing a Ga2O3 seed layer on a c-plane sapphire substrate. The x-ray diffraction and x-ray photoelectron spectroscopy analyses validated that the deposited films, following high-temperature annealing, comprised β-Ga2O3. Comparing samples with and without a 20 nm seed layer, it was found that the former exhibited fewer oxygen defects and substantially improved crystal quality. The incorporation of the seed layer led to the realization of detectors with remarkably low dark current (≤15.3 fA). Moreover, the photo-to-dark current ratio was enhanced by 30% (surpassing 1.3 × 104) and the response/recovery time reduced to 0.9 s/0.01 s, indicating faster performance. Furthermore, these detectors demonstrated higher responsivity (4.8 mA W−1), improved detectivity (2.49 × 1016 Jones), and excellent solar-blind characteristics. This study serves as a foundational stepping toward achieving high-quality β-Ga2O3 thin film and UV detector arrays.

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Solar-blind UV photoelectric properties of pure-phase α-Ga2O3 deposited on m-plane sapphire substrate

Cited by 5 publications

References 29 publications

Self-powered UVC detectors based on α-Ga₂O₃ with enchanted speed performance

Self-powered UVC detectors based on α-Ga₂O₃ with enchanted speed performance

Ultra-wide single crystal nanobelts of β-Ga2O3 synthesized by carbothermal reduction

Enhancing β-Ga₂O₃-film ultraviolet detectors via RF magnetron sputtering with seed layer insertion on c-plane sapphire substrate

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Solar-blind UV photoelectric properties of pure-phase α-Ga2O3 deposited on m-plane sapphire substrate

Cited by 5 publications

References 29 publications

Self-powered UVC detectors based on α-Ga2O3 with enchanted speed performance

Self-powered UVC detectors based on α-Ga2O3 with enchanted speed performance

Ultra-wide single crystal nanobelts of β-Ga2O3 synthesized by carbothermal reduction

Enhancing β-Ga2O3-film ultraviolet detectors via RF magnetron sputtering with seed layer insertion on c-plane sapphire substrate

Contact Info

Product

Resources

About

Self-powered UVC detectors based on α-Ga₂O₃ with enchanted speed performance

Self-powered UVC detectors based on α-Ga₂O₃ with enchanted speed performance

Enhancing β-Ga₂O₃-film ultraviolet detectors via RF magnetron sputtering with seed layer insertion on c-plane sapphire substrate