Solar blind deep ultraviolet β-Ga<sub>2</sub>O<sub>3</sub>photodetectors grown on sapphire by the Mist-CVD method

Xu, Yu; An, Zhiyuan; Zhang, Lixin; Feng, Qian; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue

doi:10.1364/ome.8.002941

Cited by 87 publications

(33 citation statements)

References 19 publications

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“…For a better comparison, some critical parameters are listed in Table 1 . [ 10,11,20,25–31 ] It can be seen that the a‐Ga 2 O 3 phototransistor in our work demonstrates excellent photoelectric characteristics, including high responsivity and detectivity, as well as small τ d . It can be obviously seen that a 5 ms decay time is almost at the best level in Ga 2 O 3 ‐based UV detectors, especially considering the simultaneously high responsivity and detectivity parameters.…”

Section: Resultsmentioning

confidence: 75%

Boosted UV Photodetection Performance in Chemically Etched Amorphous Ga₂O₃ Thin‐Film Transistors

Han

Liang

Huo

et al. 2020

Advanced Optical Materials

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the further promotion of devices' performance. [7] As is well known to all, PPC phenomenon occurs in most oxide semiconductor materials owing to the large quantity of oxygen vacancy (V o ) defects and high density of trap states. [8,9] Phototransistors, one kind of three-terminal PD with one more terminal-gate to flexibly control the channel carriers' transportation behavior, have been regarded as an alternative solution to improve the PD performance. [10,11] Phototransistor possesses the intrinsic gain of transistors and regular photoconductors, which makes it possible to achieve both high light-todark current ratio and responsivity. [11,12] Last but not the least, the PPC phenomenon is possibly eliminated by exerting a gate pulse, as Jeon et al. demonstrated in the three-terminal photosensor array with GIZO/IZO/GIZO channel. [5] For a-Ga 2 O 3 UV PD or imaging applications, a research on fabrication and utilization of phototransistor architecture is urgently needed to well suppress PPC and raise the response speed while retaining a high photoresponsivity as well. Meanwhile, the controllable and selective etching of a-Ga 2 O 3 channel to metals and other oxides is critical to the achievement of a low gate leakage current and good transfer characteristics. [13,14] Wet chemical etching of β-Ga 2 O 3 has been demonstrated by using H 3 PO 4 and H 2 SO 4 , respectively. [15,16] However, these strong acids will corrode metals and oxides readily, which bring a big trouble to device fabrication.In this paper, we present bottom-gate a-Ga 2 O 3 thin film transistors (TFTs) and phototransistors where the a-Ga 2 O 3 channels are selectively etched using tetramethyl ammonium hydroxide (TMAH) aqueous solution. Note that this new etching method owns the advantages of low cost, simple operation, good safety, and desirable compatibility with lithography. For the common bottom-gate Ga 2 O 3 TFT on Si, the device with patterned channel exhibits superior transistor characteristics to the unpatterned one. A bottom-gate a-Ga 2 O 3 phototransistor with interdigital finger-shaped source/drain (S/D) electrodes is prepared on quartz and applied to detect deep UV rays. It demonstrates typical transistor output and transfer characteristics with a high on/off ratio of ≈10 7 . Meanwhile, an excellent photodetector performance appears under a 254 nm UV illumination, including a high lightto-dark ratio of 5 × 10 7 and responsivity of 5.67 × 10 3 A W −1 . By applying a positive gate pulse, PPC in the a-Ga 2 O 3 phototransistors is effectively eliminated with a fast decay in 5 ms. A three-terminal thin-film transistor (TFT) architecture is essential for photodetectors to reach a good balance between high responsivity and fast response speed. Bottom-gate amorphous Ga 2 O 3 (a-Ga 2 O 3 ) TFTs are fabricated to boost their UV photodetection properties. During the device fabrication process, a simple chemical-etching solution with the advantages of easy operation, low cost, and compatibility with traditional lithography process, is developed to sele...

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Section: Resultsmentioning

confidence: 75%

Boosted UV Photodetection Performance in Chemically Etched Amorphous Ga₂O₃ Thin‐Film Transistors

Han

Liang

Huo

et al. 2020

Advanced Optical Materials

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“…It should be noted that there is no annealing process here since it is reported that a Schottky‐like contact is more benefit for the PDs. [ 43,44 ] Figure a shows the room temperature I – V characteristics of PD‐800 with linear and semilogarithmic coordinates. The UV light with a radiation intensity ( P λ ) of 100 µW cm −2 was illuminated onto the fabricated PD with a 3 μm electrode spacing (an effective irradiated area of 5010 µm 2 ).…”

Section: Resultsmentioning

confidence: 99%

Ultrahigh‐Performance Solar‐Blind Photodetectors Based on High Quality Heteroepitaxial Single Crystalline β‐Ga₂O₃ Film Grown by Vacuumfree, Low‐Cost Mist Chemical Vapor Deposition

Chen

et al. 2021

Adv Materials Technologies

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Due to the suitable bandgap, superior chemical and physical properties, the β‐phase gallium oxide (β‐Ga2O3) has the great potential to fabricate the deep ultraviolet solar‐blind photodetectors (DUV PDs). However, the low material quality, high material growth cost, and insufficient device performance, are urgently required to be solved for practical applications. In this work, by using a vacuumfree, low‐cost mist chemical vapor deposition method, the high quality β‐Ga2O3 single crystal films are successfully heteroepitaxially grown on (0001) sapphire substrates. X‐ray diffraction and transmission electron microscopy measurements identify the heteroepitaxial relationship with (2true¯01) β‐Ga2O3‖(0001) sapphire. At the optimal growth temperature of 800 °C, the film shows a high quality pure β‐Ga2O3 phase with the small full width at half maximum of 0.71°. Furthermore, the metal–semiconductor–metal DUV PDs are fabricated based on such single crystal β‐Ga2O3 films, which exhibit excellent photoelectric performance. A very high photoresponsivity 22 000 A W−1 under 254 nm light illumination, which corresponds to a quantum efficiency of 1.07 × 107% and a high detectivity of 1.1 × 1016 Jones, almost the highest ever reported. The low‐cost film heteroepitaxial growth method and the ultrahigh device performance pave an alternative way for the fabrication of high‐performance β‐Ga2O3 solar‐blind DUV PDs.

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“…In today's fast-developing information age, optoelectronic technology has become a frontier discipline in the information industry. A wide variety of optoelectronic devices, such as lasers [1], light-emitting diodes [2], photodetectors [3], [30] and solar cells [4], have penetrated into all aspects of human life and work. They also play an important role in the fields of space exploration [5] and national defense security.…”

Section: Introductionmentioning

confidence: 99%

Flexible Solar-Blind Ga₂O₃ Ultraviolet Photodetectors With High Responsivity and Photo-to-Dark Current Ratio

Hao

Zhang

et al. 2019

IEEE Photonics J.

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In this work, flexible solar blind Ga 2 O 3 ultraviolet photodetectors with high responsivity and photo-to-dark current ratio are demonstrated. The Ga 2 O 3 films are obtained by the RF magnetron sputtering method on flexible polyimide (PI) substrates and the results demonstrate that all the films grown under various temperatures are amorphous. When the incident light wavelength is less than 254 nm, the incident light is effectively absorbed by the Ga 2 O 3 film. By controlling the growth temperature of the material, the responsivity and photo-to-dark current ratio of the corresponding metal-semiconductor-metal photodetectors are significantly improved. At growth temperature of 200°C, the current under 254 nm illumination obtains 396 nA at voltage of 20 V (corresponding responsivity is 52.6 A/W), the photo-to-dark current ratio is more than 10 5 , and the external quantum efficiency reaches 2.6 × 10 4 %, which is among the best reported Ga 2 O 3 ultraviolet photodetectors including the devices on the rigid substrates. After the bending and fatigue tests, the flexible detectors have negligible performance degradation, showing excellent mechanical and electrical stability.

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Solar blind deep ultraviolet β-Ga₂O₃photodetectors grown on sapphire by the Mist-CVD method

Cited by 87 publications

References 19 publications

Boosted UV Photodetection Performance in Chemically Etched Amorphous Ga₂O₃ Thin‐Film Transistors

Boosted UV Photodetection Performance in Chemically Etched Amorphous Ga₂O₃ Thin‐Film Transistors

Ultrahigh‐Performance Solar‐Blind Photodetectors Based on High Quality Heteroepitaxial Single Crystalline β‐Ga₂O₃ Film Grown by Vacuumfree, Low‐Cost Mist Chemical Vapor Deposition

Flexible Solar-Blind Ga₂O₃ Ultraviolet Photodetectors With High Responsivity and Photo-to-Dark Current Ratio

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Solar blind deep ultraviolet β-Ga2O3photodetectors grown on sapphire by the Mist-CVD method

Cited by 87 publications

References 19 publications

Boosted UV Photodetection Performance in Chemically Etched Amorphous Ga2O3 Thin‐Film Transistors

Boosted UV Photodetection Performance in Chemically Etched Amorphous Ga2O3 Thin‐Film Transistors

Ultrahigh‐Performance Solar‐Blind Photodetectors Based on High Quality Heteroepitaxial Single Crystalline β‐Ga2O3 Film Grown by Vacuumfree, Low‐Cost Mist Chemical Vapor Deposition

Flexible Solar-Blind Ga2O3 Ultraviolet Photodetectors With High Responsivity and Photo-to-Dark Current Ratio

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Solar blind deep ultraviolet β-Ga₂O₃photodetectors grown on sapphire by the Mist-CVD method

Boosted UV Photodetection Performance in Chemically Etched Amorphous Ga₂O₃ Thin‐Film Transistors

Boosted UV Photodetection Performance in Chemically Etched Amorphous Ga₂O₃ Thin‐Film Transistors

Ultrahigh‐Performance Solar‐Blind Photodetectors Based on High Quality Heteroepitaxial Single Crystalline β‐Ga₂O₃ Film Grown by Vacuumfree, Low‐Cost Mist Chemical Vapor Deposition

Flexible Solar-Blind Ga₂O₃ Ultraviolet Photodetectors With High Responsivity and Photo-to-Dark Current Ratio