Sol–gel synthesis of sub-50 nm ZnO nanowires on pulse laser deposited ZnO thin films

Bae, Chang Hyun; Park, Seung Min; Ahn, Seung‐Eon; Oh, Dong Jin; Kim, Gyu Tae; Ha, Jeong Sook

doi:10.1016/j.apsusc.2006.03.006

Cited by 34 publications

(23 citation statements)

References 14 publications

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“…[3][4][5] By now, many methods have been used to synthesize ZnO NWs, including physical vapor depositions, 6 hydrothermal methods, 7 electrochemistry depositions, 8 metal-organic chemical vapor depositions (MOCVD), 9 and sol-gel synthesis methods. 10 However, most obtained ZnO NWs have high density of interspaces, which reduce the quality of metal contacts and carrier collection efficiency. To fabricate highly sensitive ZnO NWs based UV photodetectors, it is essential to develop a method to improve the carrier collection efficiency without significantly adding cost or processing steps.…”

mentioning

confidence: 99%

Heterojunction photodiode fabricated from multiwalled carbon nanotube/ZnO nanowire/p-silicon composite structure

Shao¹,

Yu²,

Lian³

et al. 2013

Applied Physics Letters

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A heterojunction photodiode was fabricated from multiwalled carbon nanotubes (MWCNTs)/ZnO nanowires/p-Si (100) substrate composite structure. The heterojunction photodiode demonstrated a faster transient response and higher responsivity than the reference sample without deposition of MWCNTs, which is attributed to improved carrier collection and transport efficiency through the MWCNTs network. The high photoresponsivities of the devices are explained in terms of operation as a hybrid of photodiode and photoconductor modes. The spectral response of the devices showed dependence on voltage polarity and is attributed to the high valance band offset in the interfacial region of ZnO and p-Si substrate.

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confidence: 99%

Heterojunction photodiode fabricated from multiwalled carbon nanotube/ZnO nanowire/p-silicon composite structure

Shao¹,

Yu²,

Lian³

et al. 2013

Applied Physics Letters

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“…from 510 to 580 nm, while on the contrary such profile is almost absent from the corresponding 10 spectra of ZnO film on glass substrate. Several studies attribute the existence of green-yellow emission profile to the presence of both zinc interstitials and oxygen vacancies within the synthesized nanolayers [4,[25][26][27][28][29]. Thus it appears that ZnO nanolayers synthesized within fibres enclose some stoichiometric defects, while ZnO films synthesized on glass substrate are of lower defect concentration.…”

Section: Photoluminescence (Pl) Spectramentioning

confidence: 99%

Growth of ZnO nanolayers inside the capillaries of photonic crystal fibres

Konidakis¹,

Androulidaki²,

Zito³

et al. 2014

Thin Solid Films

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In this study, we describe the formation of ZnO nanolayers inside the air capillaries of a silica photonic crystal fibre (PCF), targeting random laser and organic vapor sensing applications. ZnO nanolayers were developed by infiltrating the capillaries of the silica PCF with Zn-acetate/methanol solutions of various concentrations, followed by annealing treatments. The growth and morphology of the synthesized ZnO nanolayers were characterized by means of scanning electron microscopy (SEM), and found to be affected by the concentration of the Zn-acetate/methanol infiltration solution. For low concentrations inspection with SEM revealed the formation of 25 and 100 nm thick ZnO nanolayers across the entire length of the infiltrated capillaries, whereas increasing the Zn-acetate concentration resulted to the formation of randomly placed isolated ZnO nanorods. Room temperature photoluminescence spectra of the ZnO nanolayers inside the PCF were measured and compared with the corresponding spectra reported for ZnO structures formed on typical surfaces.

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“…for solar cell application [32]. Researchers also achieved patterning of ZnO nano-rod array using techniques such as UV-lithography [33], nano-sphere lithography [34], soft lithography [35] (micromolding, micro-contact printing etc.) and so on.…”

Section: Introductionmentioning

confidence: 99%

Spatially selective patterning of zinc oxide precursor solution by inkjet printing

Liang

Lok

2009

2009 11th Electronics Packaging Technology Conference

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Spatially selective patterning of zinc oxide (ZnO) thin film was achieved by inkjet printing of ZnO sol-gel precursor. Factors affecting inkjet printed patterns including ink formulation and process parameters were investigated and are discussed in this paper. The morphologies of inkjet printed ZnO patterns were affected by the 'coffee ring' effect, is depend on the evaporation rate, surface tension and ink droplet volume. This surface morphology would further influent the growth of ZnO nanorods while inkjet printed ZnO patterns were employed as seed layer. Crystalline ZnO nanorods were selectively grew on inkjet printed ZnO seed layer which diameters were affected by morphology of underlying printed patterns. IntroductionZinc oxide (ZnO) as an n-type II-VI inorganic semiconducting material can be used for sensor (gas [1, 2], biomedical [3] etc.), electronic [4], optoelectronic [5], and photovoltaic [6] applications. ZnO nano-structures [7] such as nano-wire and nanorod can be prepared from solid precursor (e.g. pulse laser deposition [8], magnetron sputtering [9] etc.) or solution precursor (e.g. sol-gel [10], hydrothermal synthesis [11], electrochemical deposition [12] and microwave-assisted synthesis [13]). Preparation methods using solution precursor are attractive due to reasons including homogeneity, large area deposition, low cost, and lower energy consumption. For instance, zinc acetate [14], zinc chloride [15] and zinc nitrate [16] etc. can be used as the precursors for ZnO. Solution routes normally produce inferior materials quality as compared to deposition processes using solid precursors. One important advantage of solution precursors is capability to perform selective area patterning on different substrates using conventional patterning techniques such as micro-molding [17], interference lithography [18], and templated electrodeposition [19]. Patterning solution precursor at specific area allows arrays of devices such as transistor, sensor etc. to be realized at large scale and with low materials wastage. Some of the patterning techniques require multiple processing steps to achieve patterning. Of the patterning techniques involving solution precursors, inkjet printing (IJP) provides unique strengths in terms of drop-on-demand, design flexibility, and rapid-prototyping. IJP had been employed to pattern functional materials (e.g. polymeric, metallic, ceramic) [20] for fabrication of different devices such as solar cell [21], transistor [22], sensors [23] and so on. IJP can be either used as the sole patterning technique or combined with other techniques such as surface energy patterning and photo-lithography.

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Sol–gel synthesis of sub-50 nm ZnO nanowires on pulse laser deposited ZnO thin films

Cited by 34 publications

References 14 publications

Heterojunction photodiode fabricated from multiwalled carbon nanotube/ZnO nanowire/p-silicon composite structure

Heterojunction photodiode fabricated from multiwalled carbon nanotube/ZnO nanowire/p-silicon composite structure

Growth of ZnO nanolayers inside the capillaries of photonic crystal fibres

Spatially selective patterning of zinc oxide precursor solution by inkjet printing

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