“…Consequently, many growth techniques are used to prepare ultrathin III-V-N alloys, MQWs and superlattices (SLs) on different (Si, GaAs, InAs, InP) substrates by exploiting gas-source molecular beam epitaxy (GS-MBE), [40][41][42][43][44], hydride vapor phase epitaxy (HVPE) [45], liquid phase epitaxy (LPE), chemical beam epitaxy (CBE), atmosphericpressure metal-organic vapor-phase epitaxy (AP-MOVPE) and low-pressure MOVPE (LP-MOVPE) [46][47][48]. As the importance of these materials for designing different device structures in photonic applications is intensified, so are the obligations of many scientists and engineers to characterize them by using nondestructive experimental techniques [49][50][51][52]. Accordingly, photoreflectance (PR), photoluminescence (PL), time-resolved photoluminescence (TR-PL), IR reflectivity/transmission, micro-Raman spectroscopy (µ-RS), reflection high-energy electron diffraction (RHEED), high-resolution transmission electron microscopy (HR-TEM), spectroscopic ellipsometry (SE), high-resolution X-ray diffraction (HR-XRD), cross-sectional transmission electron microscopy (X-TEM), Hall effect measurements, Fourier transformed infrared (FTIR) spectroscopy and Raman scattering spectroscopy (RSS) are commonly used to investigate the basic properties of ternary InP 1−x (As)N x , quaternary alloys and MQWs.…”