Sol–gel spin coating growth of magnesium-doped indium nitride thin films

Lee, Hui San; Ng, Sha Shiong; Yam, F.K.

doi:10.1016/j.vacuum.2018.05.042

Cited by 8 publications

(10 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Here, the mMg is the atomic mass of Mg (24.305u), mN is the atomic mass of N (14.0067u) and mIn is the atomic mass of In (114.818u). We assumed that the Mg atom is incorporated on In lattice site and using theoretical value of ωInN = ω[E1(TO)] = 477cm -1 [21], a value of 565 cm -1 for Mg-N vibration can be obtained, which is in good agreement with the experimental value of 562 cm -1 . Thus, using this theoretical calculation, it has been proved that our experimental value of 562 cm -1 can be attributed to LVM of Mg-N [21].…”

Section: Resultssupporting

confidence: 71%

“…We assumed that the Mg atom is incorporated on In lattice site and using theoretical value of ωInN = ω[E1(TO)] = 477cm -1 [21], a value of 565 cm -1 for Mg-N vibration can be obtained, which is in good agreement with the experimental value of 562 cm -1 . Thus, using this theoretical calculation, it has been proved that our experimental value of 562 cm -1 can be attributed to LVM of Mg-N [21]. The Raman peaks at 180 cm -1 represented by the symbol ♠ and 369 cm -1 represented by the symbol ♦ shown in Fig.…”

Section: Resultssupporting

confidence: 71%

“…Therefore, an alternative growth method which is simpler, safer, and cheaper is highly needed. Recently, we have successfully grown InN [18][19][20] and Mg-doped InN [21][22][23] using sol-gel spin coating technique. This approach allows the growth below the decomposition temperature of the InN (i.e., around 630 C).…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Sol–Gel Spin Coating Growth of Magnesium-Doped Indium Nitride Thin Films on Different Substrates

Ng¹,

Lee²,

Lee³

2020

EngJ

View full text Add to dashboard Cite

We report on the growth of p-type indium nitride (InN) thin films on different substrates using a relatively simple and cost-effective sol-gel spin coating method. The precursors for the indium source and p-type dopant were indium nitrate hydrate and magnesium chloride 6-hydrate powders, respectively. The structural, morphology, and optical properties of p-type InN thin films grown on different substrates were investigated. X-ray diffraction patterns revealed that the deposited Mg-doped InN thin film on GaN/AlN/Si(111) template show polycrystalline wurtzite structure with a strong InN(002) orientation and have a good crystallinity. Field emission scanning electron microscopy images and energy dispersive X-ray results showed that all the films exhibit densely packed surface morphology with hexagonal-like grains shape and low oxygen percentage with almost 1:1 ratio of indium to nitrogen. Moreover, two Raman-active modes of E2(High) and A1(LO) of the wurtzite InN were clearly observed for all samples. The ultraviolet-visiblenear infrared spectroscopy results showed that the energy bandgap of the Mg-doped InN thin films was in the range of 1.62-1.66 eV. From all the results, it can be concluded that the Mg doped InN film on GaN/AlN/Si(111) substrate has better crystalline quality as compared to that of other substrates.

show abstract

Section: Resultssupporting

confidence: 71%

Section: Resultssupporting

confidence: 71%

See 1 more Smart Citation

Sol–Gel Spin Coating Growth of Magnesium-Doped Indium Nitride Thin Films on Different Substrates

Ng¹,

Lee²,

Lee³

2020

EngJ

View full text Add to dashboard Cite

show abstract

“…The role of Mg and C impurities in GaAs and InAs is also confirmed as acceptors (Mg − In(Ga) and C − As ). On the contrary, in III-Ns (AlN, GaN, InN), the behavior of Si, Mg and C dopants has not been fully ascertained [48][49][50][51][52][58][59][60][61][62][63][64][65][66][67][68].…”

Section: Introductionmentioning

confidence: 99%

“…Consequently, many growth techniques are used to prepare ultrathin III-V-N alloys, MQWs and superlattices (SLs) on different (Si, GaAs, InAs, InP) substrates by exploiting gas-source molecular beam epitaxy (GS-MBE), [40][41][42][43][44], hydride vapor phase epitaxy (HVPE) [45], liquid phase epitaxy (LPE), chemical beam epitaxy (CBE), atmosphericpressure metal-organic vapor-phase epitaxy (AP-MOVPE) and low-pressure MOVPE (LP-MOVPE) [46][47][48]. As the importance of these materials for designing different device structures in photonic applications is intensified, so are the obligations of many scientists and engineers to characterize them by using nondestructive experimental techniques [49][50][51][52]. Accordingly, photoreflectance (PR), photoluminescence (PL), time-resolved photoluminescence (TR-PL), IR reflectivity/transmission, micro-Raman spectroscopy (µ-RS), reflection high-energy electron diffraction (RHEED), high-resolution transmission electron microscopy (HR-TEM), spectroscopic ellipsometry (SE), high-resolution X-ray diffraction (HR-XRD), cross-sectional transmission electron microscopy (X-TEM), Hall effect measurements, Fourier transformed infrared (FTIR) spectroscopy and Raman scattering spectroscopy (RSS) are commonly used to investigate the basic properties of ternary InP 1−x (As)N x , quaternary alloys and MQWs.…”

Section: Introductionmentioning

confidence: 99%

Phonon Characteristics of Gas-Source Molecular Beam Epitaxy-Grown InAs1−xNx/InP (001) with Identification of Si, Mg and C Impurities in InAs and InN

Talwar,

Yang,

Lin

2023

Crystals

View full text Add to dashboard Cite

The lattice dynamical properties of dilute InAs1−xNx/InP (001) epilayers (0 ≤ x ≤ 0.03) grown by gas-source molecular beam epitaxy were carefully studied experimentally and theoretically. A high-resolution Brüker IFS 120 v/S spectrometer was employed to measure the room-temperature infrared reflectivity (IRR) spectra at near-normal incidence (θi = 0). The results in the frequency range of 180–500 cm−1 revealed accurate values of the characteristic In-As-like and In-N-like vibrational modes. For InAs1−xNx alloys, a classical “Drude–Lorentz” model was constructed to obtain the dielectric functions ε~ω in the far IR regions by incorporating InAs-like and InN-like transverse optical ωTO modes. Longitudinal optical ωLO phonons were achieved from the imaginary parts of the simulated dielectric loss functions. The theoretical results of IRR spectra for InAs1−xNx/InP (001) epilayers using a multi-layer optics methodology provided a very good agreement with the experimental data. At oblique incidence (θi ≠ 0), our study of s- and p-polarized reflectance (Rs,p(ω)) and transmission (Ts,p(ω)) spectra allowed the simultaneous perception of the ωTO and ωLO phonons of the InAs, InN and InAs0.97N0.03 layers. Based on the average t-matrix Green’s function theory, the results of local vibrational modes for light SiIn+ donors and SiAs−, CAs− acceptors in InAs were found in good agreement with the existing Raman scattering and infrared spectroscopy data. InInN, however, the method predicted an in-band mode for the MgIn− acceptor while projecting an impurity mode of the SiIn+ donor to appear just above the maximum ωmaxInN[≡595 cm−1] phonon frequency region. In InAs1−xNx/InP (001) epifilms, the comparison of reflectivity/transmission spectra with experiments and the predictions of impurity modes for isoelectronic donor and acceptor impurities in InAs and InN can be valuable for appraising the role of defects in other technologically important semiconductors.

show abstract