Sol-gel prepared In2O3 thin films

Gurlo, Aleksander; Ivanovskaya, M. I.; Pfau, A.; Weimar, Udo; Göpel, Wolfgang

doi:10.1016/s0040-6090(97)00295-2

Cited by 146 publications

(69 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…In ITO films the low binding energy O1s component (labeled as A) at ∼530 eV is attributed to oxygen in the oxide crystal, while the high binding energy one(s) (labeled as B) at ∼532 eV has been assigned to: (a) oxygen ions in oxygen-deficient regions, (b) oxygen atoms in an amorphous phase, (c) oxygen bound to Sn, (d) adsorbed oxygen species (Omx-) (e) hydroxyl groups associated to either adsorbed OH or In(OH)x, e.g. [15,16] Angle-resolved XPS data (not shown) suggested that adsorbed species did not have significant contribution to the presence of the high-binding energy shoulder. We suggest that the 532 eV component is attributed to the oxygen deficiency and the presence of the as-deposited amorphous ITO phase (Fig.…”

Section: Ito/p-type Si (001) Interfacementioning

confidence: 99%

Characterization of thin and ultrathin transparent conducting oxide (TCO) films and TCO‐Si interfaces with XPS, TEM and ab initio modeling

Diplas

Løvvik

Nordmark

et al. 2010

Surface & Interface Analysis

View full text Add to dashboard Cite

Interfaces play an important role in solar cell heterostructures, especially when film thicknesses decrease. In this work, we use XPS, transmission electron microscopy (TEM) and density functional theory (DFT) to study both the film and the film-Si interface of electron beam deposited indium tin oxides (ITO) and pulsed laser deposition (PLD) deposited ZnO on p-Si (100). Vacuum evaporation of ITO resulted in a film that contained elemental Sn and In which oxidized after annealing at 300• C for 30 min. Ar etching of the HF-treated Si substrate in the PLD deposition chamber caused an increase of the interfacial oxide thickness independently of the deposition temperature as a result of Ar etching-induced dangling bonds. Deposition as well as annealing at elevated temperature also increases the interfacial oxide thickness for both ITO-Si and ZnO-Si systems. Copyright

show abstract

Section: Ito/p-type Si (001) Interfacementioning

confidence: 99%

Characterization of thin and ultrathin transparent conducting oxide (TCO) films and TCO‐Si interfaces with XPS, TEM and ab initio modeling

Diplas

Løvvik

Nordmark

et al. 2010

Surface & Interface Analysis

View full text Add to dashboard Cite

show abstract

“…A wide range of deposition technologies has been used for the preparation of indium oxide films, such as dc and rf sputtering [6,7], evaporation [8,9], thermal oxidation of indium films [10], pulsed laser deposition [11], atomic layer epitaxy [12], spin coating [13] and the sol-gel method [14]. Sputtering is chosen very often among these techniques due to its high deposition rates, good film properties and process stability.…”

Section: Introductionmentioning

confidence: 99%

Ozone Sensing Properties of Polycrystalline Indium Oxide Films at Room Temperature

Kiriakidis

Bender

Katsarakis

et al. 2001

phys. stat. sol. (a)

View full text Add to dashboard Cite

The room temperature ozone sensing properties of polycrystalline indium oxide (InO x ) thin films have been investigated. Films with thicknesses of 10 to 1100 nm were sputtered in a dc-magnetron system onto Corning 7059 glass at various substrate temperatures and sputtering atmospheres. Initially, as-grown films were brought to a high conducting state through a photoreduction process by UV light exposure and subsequently they were exposed to a controlled ozone atmosphere. By this treatment the sensitivity of the films could be monitored. The films exhibit resistivity changes of more than five orders of magnitude. The sensitivity was studied for different ozone concentrations and at different temperatures. The response of the films increased linearly with the ozone concentration and the highest sensitivity was achieved when the measurements were carried out at room temperature. Best results were achieved with very thin InO x films (< 100 nm) deposited at room temperature in a pure oxygen atmosphere.

show abstract

“…The XPS spectrum of In3d showed two individual peaks positioned at 444.6 eV and 452.0 eV, which are assigned to In3d 5=2 and In3d 3=2 and the binding energy value of indium suggests the presence of In 3þ . 32 The di®erence between the spinorbit coupling energy of heterostructures for Cu2p 3=2 and Cu2p 1=2 was ca. 20 eV as shown in Fig.…”

Section: -5mentioning

confidence: 99%

Preparation and Photocatalytic Performance of One-Dimensional In₂O₃ Nanofibers, CuO Microfibers and CuO/In₂O₃ Heterostructured Nanofibers by Electrospinning Process

Zhao

Xiu

et al. 2016

NANO

View full text Add to dashboard Cite

One-dimensional (1D) CuO/In 2 O 3 heterostructured nano¯bers with the diameter of about 300 nm were successfully prepared through combining a facile single-capillary electrospinning with sintering process, and investigated by thermogravimetric and di®erential scanning calorimetry (TG-DSC), X-ray di®raction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) techniques, etc. The photocatalytic activities were examined by degrading methylene blue (MB) under 500W xenon lamp, halogen lamp and mercury lamp irradiation, respectively. The heterostructured nano¯bers exhibited a higher photocatalytic activity than P25-TiO 2 under 500W xenon lamp irradiation due to the enhanced absorption for visible light and the e±cient electron-hole separation and transportation. The single CuO micro¯bers and In 2 O 3 nano¯bers were also prepared as the control groups by the same method.

show abstract

Sol-gel prepared In2O3 thin films

Cited by 146 publications

References 14 publications

Characterization of thin and ultrathin transparent conducting oxide (TCO) films and TCO‐Si interfaces with XPS, TEM and ab initio modeling

Characterization of thin and ultrathin transparent conducting oxide (TCO) films and TCO‐Si interfaces with XPS, TEM and ab initio modeling

Ozone Sensing Properties of Polycrystalline Indium Oxide Films at Room Temperature

Preparation and Photocatalytic Performance of One-Dimensional In₂O₃ Nanofibers, CuO Microfibers and CuO/In₂O₃ Heterostructured Nanofibers by Electrospinning Process

Contact Info

Product

Resources

About

Sol-gel prepared In2O3 thin films

Cited by 146 publications

References 14 publications

Characterization of thin and ultrathin transparent conducting oxide (TCO) films and TCO‐Si interfaces with XPS, TEM and ab initio modeling

Characterization of thin and ultrathin transparent conducting oxide (TCO) films and TCO‐Si interfaces with XPS, TEM and ab initio modeling

Ozone Sensing Properties of Polycrystalline Indium Oxide Films at Room Temperature

Preparation and Photocatalytic Performance of One-Dimensional In2O3 Nanofibers, CuO Microfibers and CuO/In2O3 Heterostructured Nanofibers by Electrospinning Process

Contact Info

Product

Resources

About

Preparation and Photocatalytic Performance of One-Dimensional In₂O₃ Nanofibers, CuO Microfibers and CuO/In₂O₃ Heterostructured Nanofibers by Electrospinning Process