Sol–gel derived N-doped ZnO thin films

Influence of annealing temperature on photoluminescence properties and optical constants of N-doped ZnO thin films grown on muscovite mica substrates

“…However, it is difficult to achieve reliable and reproducible p-type ZnO for developing ZnO-based devices because ZnO exhibits natural n-type conductivity. There have been a number of recent reports on the synthesis of p-type ZnO doped by group-V elements (e.g., N, P, and As) substituting for O, or group-I elements (e.g., Li and Na) substituting for Zn, to realize high-quality p-type ZnO [7][8][9][10]. Among these dopants, N is a shallow acceptor and its ionic radius is very similar to that of O, unlike those of P and As.…”

Morphological, Structural and Optical Properties of ZnO Thin Films Deposited by Dip Coating Method

“…Compared with the above methods, sol-gel method is the most widely used due to its high versatility, simplicity, low equipment cost, the ability of accurate control of stoichiometry over the molecular level mixing, large area coating, high homogeneity and relatively low process temperature [20][21][22] . Although the sol-gel method is a relatively simple technique for depositing ZnO thin films, there are still some factors affecting the properties of the prepared films.…”

Effect of substrate temperature on the properties of pyrolytically deposited nitrogen-doped zinc oxide thin films

“…All these results show the high efficiency of SPT in depositing the p-type ZnO films compared with other deposition techniques like: sol-gel [45], chemical vapor deposition (CVD) [46][47][48], sputtering [49], atomic layer deposition (ALD) [11,50] and molecular beam epitaxy (MBE) [13,51].…”