Sol-gel deposition of PZT thin films on ceramic ZrO/sub 2/ substrates

Abstract

Pb(Zr 1-x Ti x )O 3 thin films (x = 0.55 and 0.85) were prepared on fine grained, polished ZrO 2 ceramic substrates by a sol-gel method. The high thermal expansion of ZrO 2 relative to Si allows the preparation of thicker PZT films with reduced thermal stress. For the x = 0.85 films, this reduction of thermal stress gives a preference of (001) over (100) oriented domains. For x = 0.55 films, square P-E hysteresis loops were obtained with: P r = 36 µC/cm 2 , and E c = 45 kV/cm, at a field of 160 kV/cm. Pyroelectric figures of merit, defined as P/ε, of 0.93 were measured for a 4.0 µm thick Pb(Zr 0.15 Ti 0.85 )O 3 film. The measured properties were comparable to those of highly (111) oriented films on Si. Thus, the (001) texture must be increased in order to realize improved properties

Electrical Properties of Lead Zirconate Titanate Thin Films With a ZrO2 Buffer Layer on an Electroless Ni‐Coated Cu Foil

“…Buffer layers are frequently introduced in ferroelectric thin films, including lead zirconate titanate (PZT), to control film nucleation, growth rate, 9 and film orientations to achieve improved properties and microstructures, 10 or to minimize the interface reactions and corresponding deterioration in ferroelectric properties 11 . For ferroelectric PZT thin films, both insulating buffer materials such as PbTiO 3 , 9 TiO 2 , 10,11 zirconia (ZrO 2 ), 12–18 and conducting LaNiO 3 19,20 have been investigated. Among buffer candidates, ZrO 2 is low cost and is well known to have reasonable mechanical strength, chemical durability, alkali resistance, and refractoriness 21,22 .…”

“…Among buffer candidates, ZrO 2 is low cost and is well known to have reasonable mechanical strength, chemical durability, alkali resistance, and refractoriness 21,22 . However, for most of the previous papers, the ZrO 2 buffer layer is either located underneath the bottom electrode 12 or is used as a passivation layer 13–16 for Si and/or SiO 2 , and only limited publications have investigated the effect of the ZrO 2 buffer between PZT thin films and noble metal electrodes 17,18 …”

Thickness Dependence of the Electrical Properties of Sol-Gel Derived Lead Zirconate Titanate Thin Films with (111) and (100) Texture

“…The ferroelectric and piezoelectric properties of sol-gel PZT films with different textures have been reported by various research groups [4,5,6]. Because the studies on the electrical properties of differently textured PZT films were carried out on different substrates and under different processing conditions, a systematic comparison of the properties of PZT films as a function of orientation is still missing.…”