2013
DOI: 10.3103/s8756699013050142
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SOI nanowire transistor for detection of D-NFATc1 molecules

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Cited by 11 publications
(12 citation statements)
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“…This made it possible to provide internal signal amplification due to the exponential dependence of the current in the subthreshold SOI mode of the NW sensor (transistor). Subsequently, SOI-NW sensors were used to detect HBsAg markers of hepatitis B, the liver tumor marker α-fetoprotein (sensitivity in the range of 10 –14 to 10 –15 M) [ 5 ], and the lung tumor marker D-NFATc1 with a sensitivity of 2.5 × 10 –15 M [ 6 ].…”
Section: Introductionmentioning
confidence: 99%
“…This made it possible to provide internal signal amplification due to the exponential dependence of the current in the subthreshold SOI mode of the NW sensor (transistor). Subsequently, SOI-NW sensors were used to detect HBsAg markers of hepatitis B, the liver tumor marker α-fetoprotein (sensitivity in the range of 10 –14 to 10 –15 M) [ 5 ], and the lung tumor marker D-NFATc1 with a sensitivity of 2.5 × 10 –15 M [ 6 ].…”
Section: Introductionmentioning
confidence: 99%
“…The fabrication and characteristics of the SOI-nanowire sensor chips (SOI-NW chips) are described in detail elsewhere [ 15 , 16 ]. The process of silicon-on-insulator (SOI) nanowire chips fabrication, as schematically shown in Figure 1 , comprised of the following steps: the production of initial SOI structures with a cut-off Si layer thickness of 500–600 nm while using hydrogen exfoliation technology; thinning of the SOI layer to nanometer dimensions by a sequential cycle of operations-thermal oxidation; removal of sacrificial oxide in HF solution; lateral structuring of the SOI layers using optical or electron lithography to form nanowire structures with contact areas; the formation of ohmic contacts to nanometer thick SOI layer by thickening the SOI in the contact areas by a poly-Si layer deposition and subsequent doping; lateral structuring of SOI layers while using electronic lithography and gas-plasma chemical etching, which allows for one to form a nanometer-size active element; metallization and contact wiring; and, finally, crystal cutting.…”
Section: Methodsmentioning
confidence: 99%
“…The surface of the SOI-NW chips was first treated chemically, in order to remove the organic contaminants and the natural oxide from the sensor surface, with isopropanol, HF, and CH 3 OH similarly to the procedure that was described in our previous papers [ 14 , 15 , 16 , 17 , 18 ]. After that, the chips were treated with glow discharge plasma in a homemade apparatus that was developed in JIHT RAS, in order to form OH groups on the sensor surface, and then the chip was treated in APTES vapors, according to [ 17 , 18 ].…”
Section: Methodsmentioning
confidence: 99%
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“…The use of biosensors with sensor elements of nanometer size-such as nanowires and nanoribbons-opens new horizons in biomedical research. These biosensors allow one to perform direct label-free detection of various targets-such as viral particles [6] and biological macromolecules (proteins [7][8][9][10][11][12][13] and nucleic acids [14][15][16][17][18][19])-in real time, attaining low (<1 fM, i.e., <10 −15 M) concentration detection limits [20]. The principle of operation of these biosensors consists of recording a modulation of an electric current, flowing through the sensor elements, in the course of binding of target particles (i.e., macromolecules or viral particles of interest) to their surface.…”
Section: Introductionmentioning
confidence: 99%