SOI lateral bipolar transistor with drive current >3mA/μm

Ge-on-insulator lateral bipolar transistors

“…lea)) with a self aligned base contact located on top of the intrinsic-base region, and base width of about 2 /-lm, was first demonstrated almost thirty years ago [1]. With the advancement of lithography capability in manufacturing at present, it is possible to fabricate Si-OI lateral complementary bipolar (NPN plus PNP) transistors with base widths much narrower than 100 nm [2,3] using CMOS-like processes. Experimental data show that semiconductor-on-insulator (SOl) lateral bipolar devices have drive-current capability much higher than that of CMOS [3] and model studies [4] suggest them to be scalable in lateral dimension like CMOS, and could have fmax > 1 THz.…”

A Thermally Stable Quasi-CMOS Bipolar Logic

“…However, they can be technologically compatible with more traditional CMOS circuits. The symmetric lateral bipolar transistors on PD-SOI substrates [2][3][4][5][6][7] and CBIP gates using them could be used as additional components of PD-SOI CMOS circuits, for example in I/O buffers, or even as either high performance or ultra-low power digital blocks. The doping-free symmetric lateral bipolar transistors [11][12][13] could become a valuable addition to FD-SOI (Fully Depleted Silicon on Insulator) CMOS circuits, where channel area of MOS devices is not intentionally doped.…”

“…Such transistors are small and symmetric, complementary pairs of NPN and PNP devices can be made. Later in a series of papers [3][4][5][6][7] these transistors were investigated both theoretically and experimentally, including experimental characterization of inverters, SRAM cell flip-flops and ring oscillators. It was suggested that CMOS-like bipolar logic, i.e.…”

“…CMOS: VDD=0.7V. Temperature 300K in both cases.It has been demonstrated[4,6] that delay of a CBIP inverter can vary by many orders of magnitude by varying its supply voltage. The performance of CBIP-based thermally stabilized digital circuits can be adjusted by the voltage VCC and/or resistance R. The second example demonstrates this feature by replacing resistor R by a NMOS transistor, whose gate voltage is controlled by a voltage source VREG (Figure20).…”

A Thermally Stable Quasi-CMOS Bipolar Logic

“…Such transistors are small and symmetric, complementary pairs of NPN and PNP devices can be made. Later in a series of papers [3][4][5][6][7] these transistors were investigated both theoretically and experimentally, including experimental characterization of inverters, SRAM cell flip-flops and ring oscillators. It was suggested that CMOS-like bipolar logic, i.e., logic gates made of complementary pairs of NPN and PNP transistors, could be useful both for very fast circuits and very low power circuits.…”