SOI for digital CMOS VLSI: design considerations and advances

Chuang, Ching-Te; Lu, Pong‐Fei; Anderson, C.J.

doi:10.1109/5.663545

Cited by 94 publications

(1 citation statement)

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“…Due to advances in the SOI platform and its compatibility with complementary metal-oxide-semiconductor (CMOS) technology, the wavelength-scale optical elements are achieved [17,18]. A high refractive index contrast in SOI-based structures makes it possible to reduce the overall footprint of the sensor to just a few microns [19,20] by actively confining optical modes. Similarly, there is an increasing use of phase change materials (PCMs) in the integrated optical devices [21,22].…”

Section: Introductionmentioning

confidence: 99%

Broadband-Tunable Vanadium Dioxide (VO2)-Based Linear Optical Cavity Sensor

Ayaz,

Balazadeh Koucheh,

Sendur

2024

Nanomaterials

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Sensors fabricated by using a silicon-on-insulator (SOI) platform provide promising solutions to issues such as size, power consumption, wavelength-specific nature of end reflectors and difficulty to detect ternary mixture. To address these limitations, we proposed and investigated a broadband-thermally tunable vanadium dioxide (VO2)-based linear optical cavity sensor model using a finite element method. The proposed structure consists of a silicon wire waveguide on a silicon-on-insulator (SOI) platform terminated with phase-change vanadium oxide (VO2) on each side to provide light confinement. A smooth transmission modulation range of 0.8 (VO2 in the insulator state) and 0.03 (VO2 in the conductive phase state) in the 125 to 230 THz spectral region was obtained due to the of Fabry–Pérot (FP) effect. For the 3.84 μm cavity length, the presented sensor resulted in a sensitivity of 20.2 THz/RIU or 179.56 nm/RIU, which is approximately two orders of magnitude higher than its counterparts in the literature. The sensitivity of the 2D model showed direct relation with the length of the optical cavity. Moreover, the change in the resonating mode line width Δν of approximately 6.94 THz/RIU or 59.96 nm/RIU was also observed when the sensor was subjected to the change of the imaginary part k of complex refractive index (RI). This property of the sensor equips it for the sensing of aternary mixture without using any chemical surface modification. The proposed sensor haspotential applications in the areas of chemical industries, environmental monitoring and biomedical sensing.

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