SOI-based micro-mechanical terahertz detector operating at room-temperature and atmospheric pressure

Froberger, Kévin; Walter, Benjamin; Lavancier, Melanie; Peretti, Romain; Ducournau, Guillaume; Lampin, Jean‐François; Faucher, M.; Barbieri, Stefano

doi:10.1063/5.0095126

Cited by 2 publications

(3 citation statements)

References 19 publications

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“…Moreover, they also mentioned that a room-temperature NETD below 10 mK appears feasible with further scaling and optimization. To date and to our knowledge, only one work [77] has demonstrated a MEMS resonator based on bending mode for THz detection, in addition to the previously reported GaAs double-clamped MEMS beam bolometer [59]. In that work, as schematically shown To date and to our knowledge, only one work [77] has demonstrated a MEMS resonator based on bending mode for THz detection, in addition to the previously reported GaAs double-clamped MEMS beam bolometer [59].…”

Section: Thz/ir Detection Based On Mems/nems Resonatorsmentioning

confidence: 91%

“…A number of groups have demonstrated that MEMS/NEMS resonators can work as fast and highly sensitive THz/IR detectors. Depending on the vibrational mode and geometrical shape, they can be categorized as torsional mode [72][73][74][75][76], bending mode [59,77], or membranous shape [57,78,79]. Table 1 provides a survey of the performance of THz/IR detectors based on MEMS/NEMS resonators, allowing for an objective comparison of existing MEMS bolometers.…”

Section: Thz/ir Detection Based On Mems/nems Resonatorsmentioning

confidence: 99%

“…To date and to our knowledge, only one work [77] has demonstrated a MEMS resonator based on bending mode for THz detection, in addition to the previously reported GaAs double-clamped MEMS beam bolometer [59]. In that work, as schematically shown To date and to our knowledge, only one work [77] has demonstrated a MEMS resonator based on bending mode for THz detection, in addition to the previously reported GaAs double-clamped MEMS beam bolometer [59]. In that work, as schematically shown in Figure 1b, the resonator is fabricated as a suspended U-shaped cantilever of micrometric size, on top of which two aluminum half-wave dipole antennas are deposited.…”

Section: Thz/ir Detection Based On Mems/nems Resonatorsmentioning

confidence: 99%

See 2 more Smart Citations

Terahertz Detectors Using Microelectromechanical System Resonators

Zhang

Hirakawa

2023

Sensors

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The doubly clamped microelectromechanical system (MEMS) beam resonators exhibit extremely high sensitivity to tiny changes in the resonance frequency owing to their high quality (Q-) factors, even at room temperature. Such a sensitive frequency-shift scheme is very attractive for fast and highly sensitive terahertz (THz) detection. The MEMS resonator absorbs THz radiation and induces a temperature rise, leading to a shift in its resonance frequency. This frequency shift is proportional to the amount of THz radiation absorbed by the resonator and can be detected and quantified, thereby allowing the THz radiation to be measured. In this review, we present an overview of the THz bolometer based on the doubly clamped MEMS beam resonators in the aspects of working principle, readout, detection speed, sensitivity, and attempts at improving the performance. This allows one to have a comprehensive view of such a novel THz detector.

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Section: Thz/ir Detection Based On Mems/nems Resonatorsmentioning

confidence: 91%

Section: Thz/ir Detection Based On Mems/nems Resonatorsmentioning

confidence: 99%

Section: Thz/ir Detection Based On Mems/nems Resonatorsmentioning

confidence: 99%

See 1 more Smart Citation

Terahertz Detectors Using Microelectromechanical System Resonators

Zhang

Hirakawa

2023

Sensors

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Terahertz Radiation Detectors Using CMOS Compatible SOI Substrates

Hasan,

Khan,

Shahzadi

et al. 2024

Adv Funct Materials

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In recent years, silicon‐based room temperature Terahertz (THz) detectors have become the most optimistic research area because of their high speed, low cost, and unimpeded compatibility with mainstream complementary metal‐oxide‐semiconductor (CMOS) device technologies. However, Silicon (Si) suffers from low responsivity and high noise at THz frequencies. In this review, the recent advances in Si‐based THz detectors using silicon‐on‐insulator (SOI) substrates are presented. These offer several advantages over bulk counterparts, such as reduced parasitic capacitance, enhanced electric field confinement, and improved thermal isolation. The different types of THz detectors exploiting SOI substrate, such as conventional metal‐oxide‐semiconductor field effect transistors (MOSFETs), junction‐less MOSFETs, junction‐less nanowires field effect transistors (JLNWFETs), micro‐electromechanical system (MEMS), metal‐semiconductor‐metal (MSM) structures, and single electron transistor (SET), are discussed, and their key performances in terms of responsivity, noise equivalent power (NEP), bandwidth, and dynamic range are compared. The challenges and opportunities for further improvement of SOI THz detectors, such as device scaling, integration, and modulation, are also highlighted. This review may offer compelling evidence supporting the idea that SOI THz detectors have the potential to facilitate high performance, low power consumption, and scalability—qualities essential for advancing next‐level technologies.

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SOI-based micro-mechanical terahertz detector operating at room-temperature and atmospheric pressure

Cited by 2 publications

References 19 publications

Terahertz Detectors Using Microelectromechanical System Resonators

Terahertz Detectors Using Microelectromechanical System Resonators

Terahertz Radiation Detectors Using CMOS Compatible SOI Substrates

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