Soft X-Ray Emission Studies of the Electronic Structure in Silicon Nanoclusters

Abstract

Density of states changes in the valence and conduction band of silicon nanoclusters were monitored using soft x-ray emission and absorption spectroscopy as a function of cluster size. A progressive increase in the valence band edge toward lower energy is found for clusters with decreasing diameters. A similar but smaller shift is observed in the near-edge x-ray absorption data of the silicon nanoclusters.