Abstract:A new soft-punch-through (SPT) buffer concept for 600-1200 V insulated-gate bipolar transistors (IGBTs) based on thin wafer technology is proposed. The new SPT structure employs an epitaxial layer for the lightly doped n-type drift region, which is grown on a thick starting material or substrate. The n-type substrate serves as the SPT buffer region. The doping concentration of both drift and buffer regions are comparably low with the buffer region having a higher doping level. The design options of this new co… Show more
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