Soft-mask fabrication of gallium arsenide nanomembranes for integrated quantum photonics

Midolo, Leonardo; Pregnolato, Tommaso; Kiršanskė, Gabija; Stobbe, Søren

doi:10.1088/0957-4484/26/48/484002

Cited by 49 publications

(60 citation statements)

References 34 publications

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“…Fifth, the membrane should be thinner than ∼250 nm to ensure single-mode behavior in waveguide structures. In fact, the fabrication of such nanostructures with a soft-mask technique sets a slightly stronger constraint: 180 nm is the maximum membrane thickness which can be processed with vertical sidewalls [24]. Sixth, the quantum dots must be located close to the center of the diode structure to maximize the coupling to TE-like photonic modes [13].…”

Section: P-i-n-i-n Quantum Dot Heterostructurementioning

confidence: 99%

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Narrow optical linewidths and spin pumping on charge-tunable close-to-surface self-assembled quantum dots in an ultrathin diode

et al. 2017

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We demonstrate full charge control, narrow optical linewidths, and optical spin pumping on single selfassembled InGaAs quantum dots embedded in a 162.5-nm-thin diode structure. The quantum dots are just 88 nm from the top GaAs surface. We design and realize a p-i-n-i-n diode that allows single-electron charging of the quantum dots at close-to-zero applied bias. In operation, the current flow through the device is extremely small resulting in low noise. In resonance fluorescence, we measure optical linewidths below 2 μeV, just a factor of 2 above the transform limit. Clear optical spin pumping is observed in a magnetic field of 0.5 T in the Faraday geometry. We present this design as ideal for securing the advantages of self-assembled quantum dots-highly coherent single-photon generation, ultrafast optical spin manipulation-in the thin diodes required in quantum nanophotonics and nanophononics applications.

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Section: P-i-n-i-n Quantum Dot Heterostructurementioning

confidence: 99%

“…The diode itself is grown on top of a 1371-nm-thick Al 0.75 Ga 0. 25 As sacrificial layer which enables fabrication of free standing membranes via selective wet etching [24]. The first part of the active layer is a 12.5-nm-thick layer of intrinsic GaAs [no.…”

Section: (C)mentioning

confidence: 99%

Narrow optical linewidths and spin pumping on charge-tunable close-to-surface self-assembled quantum dots in an ultrathin diode

et al. 2017

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“…A mesa structure is defined by standard optical lithography and wet etching, and connected through the bottom n-type and top p-type ohmic contacts. The sample biased at a constant electric field of around 100 kV/cm [41]. The central part of the nanostructure consists of a so-called slow-light waveguide section, the white-shaded region in Fig.…”

mentioning

confidence: 99%

Two mechanisms of disorder-induced localization in photonic-crystal waveguides

et al. 2017

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Unintentional but unavoidable fabrication imperfections in state-of-the-art photonic-crystal waveguides lead to the spontaneous formation of Anderson-localized modes thereby limiting slowlight propagation and its potential applications. On the other hand, disorder-induced cavities offer an approach to cavity-quantum electrodynamics and random lasing at the nanoscale. The key statistical parameter governing the disorder effects is the localization length, which together with the waveguide length determines the statistical transport of light through the waveguide. In a disordered photonic-crystal waveguide, the localization length is highly dispersive, and therefore, by controlling the underlying lattice parameters, it is possible to tune the localization of the mode. In the present work, we study the localization length in a disordered photonic-crystal waveguide using numerical simulations. We demonstrate two different localization regimes in the dispersion diagram where the localization length is linked to the density of states and the photon effective mass, respectively. The two different localization regimes are identified in experiments by recording the photoluminescence from quantum dots embedded in photonic-crystal waveguides.In quantum nanophotonics, low-dimensional photonic nanostructures, such as cavities or waveguides, are fabricated in order to enhance the photon-emitter interaction [1]. Importantly, the photon dispersion can be engineered, enabling, e.g., slow-light transport [2] or efficient single-photon sources [3]. However, the optical properties of photonic nanostructures are often rather sensitive to unintentional but unavoidable fabrication imperfections [4,5]. The interplay between order and disorder in a photonic crystal [6,7] or a photonic-crystal waveguide [8-10] may induce strong light confinement due to multiple light scattering. The underlying wave interference process leads to disorder-induced Anderson localization, which was initially developed to explain the metal-insulator phase transition for electron waves [11]. In photonic crystals, the ability to precisely mold the dielectric medium even on a length scale smaller than the photoniccrystal unit cell implies that the photon dispersion relation can be engineered. Consequently, light localization processes can be modified. In the present work, we identify two different regimes of Anderson localization and we extract the governing localization length, ξ. In these two regimes, the localization length is linked to two different underlying properties of the photonic lattice, i.e., either the photonic density of states (DOS) or the photon effective mass.To reveal the two different mechanisms leading to localization, we study the scaling of the localization length, ξ, which is the ensemble-averaged exponential decay of the electromagnetic field intensity. ξ is a key parameter in the localization regime determining the light transport, and therefore is related to the light-matter interaction strength between a quantum emitter and an Anderson...

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“…However, the fabrication process requires a low‐index substrate (silica), which can physically support the polymer structure without introducing additional loss. Planar GaAs devices with deterministic photon–emitter coupling, on the contrary, are fabricated on a high‐index sacrificial layer (Al x Ga

_{1 - x}

As) which is subsequently removed to form suspended waveguides . A cladded inverted taper for this platform has not yet been demonstrated.…”

Section: Introductionmentioning

confidence: 99%

“…Figure b). The GaAs waveguide circuit is fabricated by means of electron beam (e‐beam) lithography, followed by dry and wet etching . The tapers are patterned on a 200‐nm‐thick CSAR 9 positive e‐beam resist.…”

Section: Introductionmentioning

confidence: 99%

Suspended Spot‐Size Converters for Scalable Single‐Photon Devices

et al. 2019

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The realization of a highly efficient optical spot‐size converter for the end‐face coupling of single photons from GaAs‐based nanophotonic waveguides with embedded quantum dots is reported. The converter is realized using an inverted taper and an epoxy polymer overlay providing a 1.3 µm output mode field diameter. The collection of single photons from a quantum dot into a lensed fiber with a rate of 5.84 ± 0.01 MHz is demonstrated and a chip‐to‐fiber coupling efficiency of ≈48% is estimated. The stability and compatibility with cryogenic temperatures make the epoxy waveguides a promising material to realize efficient and scalable interconnects between heterogeneous quantum photonic integrated circuits.

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Soft-mask fabrication of gallium arsenide nanomembranes for integrated quantum photonics

Cited by 49 publications

References 34 publications

Narrow optical linewidths and spin pumping on charge-tunable close-to-surface self-assembled quantum dots in an ultrathin diode

Narrow optical linewidths and spin pumping on charge-tunable close-to-surface self-assembled quantum dots in an ultrathin diode

Two mechanisms of disorder-induced localization in photonic-crystal waveguides

Suspended Spot‐Size Converters for Scalable Single‐Photon Devices

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