Soft ionic liquid based resistive memory characteristics in a two terminal discrete polydimethylsiloxane cylindrical microchannel

Khan, Muhammad Umair; Hassan, Gul; Bae, Jinho

doi:10.1039/d0tc03334k

Cited by 19 publications

(45 citation statements)

References 30 publications

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“…During each voltage sweep, this process is repeated, and the high metallization process occurs on both electrodes. Due to the metallization on both electrodes, the conductance decreases on the side, and the device shows multistate resistive switching with depression on both sides [ 23 ] on the electrode during repeated voltage sweep, as shown in Figure 2a,b. By applying the positive and negative voltage sweep, the current starts to decrease in both voltage regions.…”

Section: Resultsmentioning

confidence: 99%

Bioinspired Soft Multistate Resistive Memory Device Based on Silk Fibroin Gel for Neuromorphic Computing

et al. 2022

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Brain‐inspired computation is a promising field toward the next generation of intelligent computing systems. To mimic the brain functions, this field requires devices that can support the goal of computing efficiency, size, and cost. Therefore, researchers are trying to fabricate soft and flexible devices using synthetically organic and inorganic materials like solid‐state or ionic liquids. Herein, a soft and flexible bioinspired neuromorphic computing device based on organic silk fibroin gel, which is robust under external forces, is proposed. Silk fibroin protein is composed of essential and nonessential amino acids. with special amount of positively charged glycine, alanine, which plays an essential role during ionic movement to perform neuromorphic computing. Detailed electrical characterization of the proposed (Cu/silk fibroin gel/Cu) discrete device confirms the synaptic behavior by applying different pulse amplitudes, pulse widths, and frequencies. In addition, the proposed device delivers stable performance during mechanical deformations. The analysis of the present results defines that the proposed device is a potential candidate for environmentally friendly wearable intelligent electronics.

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Section: Resultsmentioning

confidence: 99%

Bioinspired Soft Multistate Resistive Memory Device Based on Silk Fibroin Gel for Neuromorphic Computing

et al. 2022

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“…[46] Bae et al developed an ionic-liquid-based soft memory device for fluid-based logic operations using a Cu/ (PAANa þ :H 2 O):(NaOH)/Cu structure in a cylindrical microchannel. [47] Zhou et al found that Ag/TiO x nanobelt/Ti memory device could evolve from a non-standard faradic capacitance in dry circumstance to a battery-like capacitance at a moisture atmosphere (35-45%), and finally to the RS state at the RH of 95-100%. [48] OHPs materials, in particular, being much sensitive to oxygen, H 2 O and light, can definitely serve as promising proxies for multifunctional RRAM applications.…”

Section: Multifunctional Rrammentioning

confidence: 99%

Recent Progress of Organic–Inorganic Hybrid Perovskites in RRAM, Artificial Synapse, and Logic Operation

Zhang

et al. 2021

Small Science

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“…In 2008, a memristor was for the first time released by St. Williams in the HP lab . After this, new materials were introduced for memristor fabrication and optimization, including biomaterials, soft materials, 2D materials, and metal oxides. − Different device structures are proposed to fabricate memristors on a larger scale in a crossbar array, including an active layer based on a single material , and a composite or heterojunction of two materials . However, the crossbar array faces a sneak current problem .…”

Section: Introductionmentioning

confidence: 99%

Asymmetric GaN/ZnO Engineered Resistive Memory Device for Electronic Synapses

Khan

Saqib

Kim

et al. 2022

ACS Appl. Electron. Mater.

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The asymmetric resistive memory device can be more suitable to reduce the crosstalk effect in a crossbar array. Similarly, this work focused on the material and design concept to achieve a one-directional engineered resistive switching memory device to reduce crosstalk effect for electronic synapses. The pulsed modulated DC sputtered crystalline GaN heterojunction with ITO/ZnO Schottky diode, resulting in one-directional digital resistive switching. The DC sputtered polycrystalline GaN is used on top of the ITO/ZnO Schottky barrier to achieve asymmetric multistate resistive switching behavior. The synaptic operation helps to investigate the stable synaptic spike-rate-dependent plasticity (SRDP), spike-timing-dependent plasticity (STDP), and long-term potentiation/depression (LTP/LTD). The weight change of the device was evaluated by the Modified National Institute of Standards and Technology (MNIST) image recognition technique at the system-level neural network. The simulation part deepens the concept that an asymmetric neuromorphic device can help reduce the crosstalk effect in a crossbar array to implement AI inference applications.

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Soft ionic liquid based resistive memory characteristics in a two terminal discrete polydimethylsiloxane cylindrical microchannel

Abstract: This paper proposes a novel soft ionic liquid (IL) electrically functional device that displays resistive memory characteristics using poly (acrylic acid) partial sodium salt (PAA-Na+:H2O) solution gel and sodium hydroxide...

Cited by 19 publications

References 30 publications

Bioinspired Soft Multistate Resistive Memory Device Based on Silk Fibroin Gel for Neuromorphic Computing

Bioinspired Soft Multistate Resistive Memory Device Based on Silk Fibroin Gel for Neuromorphic Computing

Recent Progress of Organic–Inorganic Hybrid Perovskites in RRAM, Artificial Synapse, and Logic Operation

Asymmetric GaN/ZnO Engineered Resistive Memory Device for Electronic Synapses

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