Soft Graphoepitaxy of Hexagonal PS-b-PDMS on Nanopatterned POSS Surfaces fabricated by Nanoimprint Lithography

Simão, Cláudia; Francone, Achille; Borah, Dipu; Lorret, O.; Kosmala, B.; Shaw, Matthew T.; Dittert, B.; Kehagias, N.; Zelsmann, M.; Morris, Michael A.; Torres, C.M.S.

doi:10.2494/photopolymer.25.239

Cited by 15 publications

(12 citation statements)

References 28 publications

(20 reference statements)

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“…POSS materials can control the surface chemistry and be used as an alternative to standard polymer brushes for BCP ordering . The properties of the POSS materials can be varied by grafting different ligands to the POSS cages as is revealed from the data compiled in Table 1 for POSS‐A and POSS‐G that are functionalized with eight aliphatic acrylo and glycidyl groups, respectively.…”

Section: Resultsmentioning

confidence: 99%

Soft Graphoepitaxy for Large Area Directed Self‐Assembly of Polystyrene‐block‐Poly(dimethylsiloxane) Block Copolymer on Nanopatterned POSS Substrates Fabricated by Nanoimprint Lithography

Borah

Rasappa

Salaün

et al. 2015

Adv Funct Materials

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Polyhedral oligomeric silsequioxane (POSS) derivatives have been successfully employed as substrates for graphoepitaxial directed self-assembly (DSA) of block copolymers (BCPs). Tailored POSS materials of tuned surface chemistry are subject to nanoimprint lithography (NIL) resulting in topographically patterned substrates with dimensions commensurate with the BCP block length. A cylinder forming polystyrene-block -polydimethylsiloxane (PS-b -PDMS) BCP is synthesized by sequential living anionic polymerization of styrene and hexamethylcyclotrisiloxane. The patterned POSS materials provide a surface chemistry and topography for DSA of this BCP and after solvent annealing the BCP shows well-ordered microphase segregation. The orientation of the PDMS cylinders to the substrate plane could be controlled within the trench walls by the choice of the POSS materials. The BCP patterns are successfully used as on-chip etch mask to transfer the pattern to underlying silicon substrate. This soft graphoepitaxy method shows highly promising results as a means to generate lithographic quality patterns by nonconventional methods and could be applied to both hard and soft substrates. The methodology might have application in several fi elds including device and interconnect fabrication, nanoimprint lithography stamp production, nanofl uidic devices, lab-on-chip, or in other technologies requiring simple nanodimensional patterns.

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Section: Resultsmentioning

confidence: 99%

Soft Graphoepitaxy for Large Area Directed Self‐Assembly of Polystyrene‐block‐Poly(dimethylsiloxane) Block Copolymer on Nanopatterned POSS Substrates Fabricated by Nanoimprint Lithography

Borah

Rasappa

Salaün

et al. 2015

Adv Funct Materials

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“…They can be used as resists for UV-NIL [12][13][14]. UV-NIL is a method to replicate nanostructures into photocurable material [15].…”

Section: Introductionmentioning

confidence: 99%

Nanocontact printing stamp material via bi-functionalization of polyhedral oligomeric silsesquioxanes

Kastner

Lorret

Rank

et al. 2015

European Polymer Journal

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“…[5][6][7] This self-assembly type technology can result in characteristic fingerprint patterns to highly controllably aligned lines patterns on surface using state-of-the-art directed self-assembly (DSA) techniques. [8][9][10][11] These procedures rely on the control of surface properties, either chemical or topological, to create a confinement commensurable with the polymer chains and have a direct impact in their regular arrangement.…”

Section: Introductionmentioning

confidence: 99%

Defect analysis and alignment quantification of line arrays prepared by directed self-assembly of a block copolymer

Simão

Tuchapsky

Khunsin

et al. 2014

Metrology, Inspection, and Process Control for Microlithography XXVIII

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Different linear patterns obtained from the directed self-assembly of the block copolymer (BCP) polystyrene-b-polyethylene oxide (PS-b-PEO) were analysed and compared. The hexagonal phase PS-b-PEO in a thin film exhibits linear pattern morphology, by conventional solvent annealing in an atmosphere saturated in chloroform. The surface energy of the silicon substrates was varied using surface functionalization of a self-assembly monolayer (SAM) and a polymer brush, chosen to investigate the influence of the surface energy on the self-assembly of the BCP. The linear patterns formed were analyzed with innovative image analysis software specifically developed in our laboratory to identify elements and defects of line arrays from block copolymer self-assembly. The technique starts by performing dimensional metrology to calculate the pitch size and estimate the linewidth of the lines. Secondly, the methodology allows identification and quantification of typical defects observable in BCP systems, such as turning points, disclination or branching points, break or lone points and end points. The defect density and the quantification of the alignment were estimated using our technique. The methodology presented here represents a step forward in dimensional metrology and defect analysis of BCP DSA systems and can be readily used to analyze other lithographic or non-lithographic patterns.

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Soft Graphoepitaxy of Hexagonal PS-b-PDMS on Nanopatterned POSS Surfaces fabricated by Nanoimprint Lithography

Cited by 15 publications

References 28 publications

Soft Graphoepitaxy for Large Area Directed Self‐Assembly of Polystyrene‐block‐Poly(dimethylsiloxane) Block Copolymer on Nanopatterned POSS Substrates Fabricated by Nanoimprint Lithography

Soft Graphoepitaxy for Large Area Directed Self‐Assembly of Polystyrene‐block‐Poly(dimethylsiloxane) Block Copolymer on Nanopatterned POSS Substrates Fabricated by Nanoimprint Lithography

Nanocontact printing stamp material via bi-functionalization of polyhedral oligomeric silsesquioxanes

Defect analysis and alignment quantification of line arrays prepared by directed self-assembly of a block copolymer

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