Soft ferromagnetic thin films for high frequency applications

Fergen, I.; Seemann, K.; Weth, A. von der; Schüppen, A.

doi:10.1016/s0304-8853(01)01185-4

Cited by 80 publications

(30 citation statements)

References 22 publications

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“…The corresponding uniaxial anisotropy constant, Ku is thus estimated to be 912 J/m 3 [29,30] which is higher than those of permalloy or mumetal [31][32][33][34]. Such magnetic properties are in fact very promising as compared to those reported in literature [5][6][7][8]. (Figure 1) is thought to be responsible for this phenomenon.…”

Section: Resultsmentioning

confidence: 85%

“…In brief, magnetic thin films are considered as the potential candidate for thin-film inductors with an aim to improve their M s , H k , ρ, and also compatibility with semiconductor manufacturing processes. Therefore, tremendous efforts have been devoted to developing better magnetic thin films over past decades [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

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Soft Magnetic Properties of High-Entropy Fe-Co-Ni-Cr-Al-Si Thin Films

Lin

Cheng

Chin

2016

Entropy

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Soft magnetic properties of Fe-Co-Ni-Al-Cr-Si thin films were studied. As-deposited Fe-Co-Ni-Al-Cr-Si nano-grained thin films showing no magnetic anisotropy were subjected to field-annealing at different temperatures to induce magnetic anisotropy. Optimized magnetic and electrical properties of Fe-Co-Ni-Al-Cr-Si films annealed at 200 • C are saturation magnetization 9.13 × 10 5 A/m, coercivity 79.6 A/m, out-of-plane uniaxial anisotropy field 1.59 × 10 3 A/m, and electrical resistivity 3.75 µΩ·m. Based on these excellent properties, we employed such films to fabricate magnetic thin film inductor. The performance of the high entropy alloy thin film inductors is superior to that of air core inductor.

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Section: Resultsmentioning

confidence: 85%

Section: Introductionmentioning

confidence: 99%

Soft Magnetic Properties of High-Entropy Fe-Co-Ni-Cr-Al-Si Thin Films

Lin

Cheng

Chin

2016

Entropy

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“…Magnetization of soft ferromagnetic thin films [45] and multilayer films with the outof-plane anisotropy [46] can be operated at GHz frequencies. Since EHE signal is an electrical replica of magnetization, these frequencies are available for the EHE devices.…”

Section: High Frequency Operationmentioning

confidence: 99%

Perspective of Spintronics Applications Based on the Extraordinary Hall Effect

Gerber¹,

Riss²

2008

Journal of Nanoelectronics and Optoelectronics

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Extraordinary Hall effect (EHE) is a spin-dependent phenomenon that generates voltageproportional to magnetization across a current carrying magnetic film. Magnitude of the effect can be artificially increased by stimulating properly selected spin-orbit scattering events. Already achieved sensitivity of the EHE-based sample devices exceeds 1000 Ω/T, which surpasses the sensitivity of semiconducting Hall sensors. Linear field response, thermal stability, high frequency operation, sub-micron dimensions and, above all, simplicity, robustness and low cost manufacture are good reasons to consider a wide scale technological application of the phenomenon for magnetic sensors and memory devices.2 Anisotropic magnetoresistance [1,2], planar Hall effect [3,4], spin-dependent tunneling [5,6] and the extraordinary or anomalous Hall effect (EHE) [7,8] are spin-dependent electronic transport phenomena known for many years. However, it is the discovery of the giant magnetoresistance (GMR) [9,10] that gave birth to the term spintronics and triggered a world-wide outburst of the spin-related research. Extraordinary Hall Effect (EHE) in magnetic materials was discovered more than a century ago [7], extensively studied both theoretically and experimentally [8], and left out of the mainstream research for the last thirty years. The possibility to use the effect for technical applications, such as magnetic sensors and nonvolatile magnetic random access memories (MRAM), has been mentioned more than three decades ago [11], but no significant progress was reported until recently. A probable reason for this is that although EHE in bulk magnetic materials can be significantly higher than the ordinary Hall effect in normal metals, its magnitude remained far beyond the sensitivity of semiconductors and magnetic sensors based on the anisotropic magnetoresistance [12]. The renewed interest in EHE has only recently arisen when some recipes to enhance the effect were found [13][14][15].The Hall effect in magnetic materials is commonly described [8,16] by the phenomenological equationwhere ρ H is the Hall resistivity, B, H and M are components of the magnetic induction, applied field and magnetization normal to the film plane, and D is the demagnetization factor. R 0 is the ordinary Hall coefficient related to the Lorentz force acting on moving charge carriers. R EHE , the extraordinary Hall coefficient, is associated with a break of the right-left symmetry at spin-orbit scattering in magnetic materials.. Demagnetization factor D is equal to 1 when field is applied perpendicular to a homogeneous magnetic film. In this case Eq.1 is simplified toVoltage measured between Hall contacts located perpendicular to the direction of an electric current is given by:where I is current and t thickness of the film. Fig.1 presents a typical field dependence of the Hall resistance (in a 4 nm thick Ni film at room temperature with field applied normal to the film plane.Magnetization normal to the film increases with field till saturation at about ±0.2 T. The EH...

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“…Thin nanocrystalline films belong to the class of magnetically soft nanostructured materials, which properties are studied widely because of great prospects of their practical applications [1,2]. Among various characterization techniques of such materials, the correlation magnetometry method is now being actively developed [3,4].…”

Section: Introductionmentioning

confidence: 99%

Numerical Simulation of Magnetic Microstructure in Nanocrystalline Thin Films with the Random Anisotropy

Belyaev¹,

Izotov²,

Solovev³

2017

J. Sib. Fed. Univ., Math. phys.

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The magnetic structure of thin nanocrystalline films with a random distribution of magnetization easy axes was studied by means of micromagnetic modeling. The dependences of the correlation function parameters of the non-uniform magnetization on the value of the external in-plane magnetic field were investigated in the wide range (6-1000 nm) of particles sizes. An analysis of the obtained dependences revealed a significant difference between longitudinal (along the field) and transversal (perpendicular to the field) correlation radii of a stochastic magnetic structure. The blocking effect of a fine magnetic structure-a magnetization ripple-was observed during magnetization reversal of the films.

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Soft ferromagnetic thin films for high frequency applications

Cited by 80 publications

References 22 publications

Soft Magnetic Properties of High-Entropy Fe-Co-Ni-Cr-Al-Si Thin Films

Soft Magnetic Properties of High-Entropy Fe-Co-Ni-Cr-Al-Si Thin Films

Perspective of Spintronics Applications Based on the Extraordinary Hall Effect

Numerical Simulation of Magnetic Microstructure in Nanocrystalline Thin Films with the Random Anisotropy

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