SoC Compatible 1T1C FeRAM Memory Array Based on Ferroelectric Hf0.5Zr0.5O2

Interplay between oxygen defects and dopants: effect on structure and performance of HfO2-based ferroelectrics

“…42 Both Okuno and Grenouillet et al introduced ferroelectric capacitors in one-transistor/ one-capacitor non-volatile memory arrays. 6,99 Within these arrays, having an array size of 64 kbit or 16 kbit memory cells, respectively, the capacitor area was reduced from 7800 down to 0.28 μm 2 . This reduction decreased the number of defect sites per capacitor and an improvement in cycles-tobreakdown to 10 12 cycles at target bias field conditions was reported for the single capacitor case.…”

1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline

“…Many applications based on ferroelectric HfO2-based materials have been proposed, such as ferroelectric field-effect transistors (FeFETs), ferroelectric tunnel junctions (FTJs), and one-transistor one-capacitor (1T1C) ferroelectric randomaccess memory (FeRAM). 1T1C FeRAMs allow higher endurance and lower-voltage operation because of the absence of an interfacial layer between the metal electrodes and ferroelectric layer [2,3]. Metal/ferroelectric/metal (MFM) capacitors with a large area (> 1000 μm²) have been primarily used to investigate the fundamental properties of the ferroelectric material.…”

“…To date, MFM capacitors comprising TiN/HZO/TiN have been incorporated in the BEOL process by applying a temperature of < 450 °C to avoid the degradation of the metal layers, thus demonstrating the functionality of the 1T1C FeRAM array with no degradation of the CMOS characteristics [8]. Recently, we reported a novel 64 kbit 1T1C FeRAM array with a CUB structure, including dedicated circuits, such as address decoders and a sense amplifier (SA) [3]. This structure allows the application of RTA above 500 °C, demonstrating an excellent memory window.…”

Ferroelectrics Based on HfO2 Film

“…Ferroelectric materials have two different remanent polarization states without an external electric field below the Curie temperature [2]. By taking advantage of these characteristics, a memory device can be made with a one transistor-one capacitor (1T-1C) structure that behaves like a 6T-SRAM, resulting in higher density [3,4]. Furthermore, ferroelectric devices can change their polarization state using voltage pulses to create multi-level current states, making them suitable for neuromorphic devices [5,6].…”