SnxSy compounds growth by controlled sulfurisation of SnO2

Synthesis of In-Plane Oriented Tin Sulfides by Organosulfur-Mediated Sulfurization of Ultrathin SnO2 Films

“…Above 380 °C, the Sn 2 S 3 phase is detected (see Figure S8). Such a Sn 2 S 3 phase is expected to occur from the thermal decomposition of SnS 2 in sulfur-rich environments. , The presence of Sn 2 S 3 is also confirmed by Raman analysis (see Figure S6). With regard to the film morphology, AFM images reveal an increase of the surface roughness ( R q ) (from 1 to 2.4 nm) between 350 and 370 °C, along with a dewetting of the SnS 2 film (see Figures S9a–d and S10).…”

“…In comparison with conventional inorganic sulfur precursors such as H 2 S and elemental sulfur, , TBT and TBDS demonstrated a higher selectivity in the formation of SnS and SnS 2 phases, respectively. According to literature, sulfurization of SnO 2 with elemental sulfur usually requires high temperatures (550 °C) and produces a mixture of both SnS 2 and Sn 2 S 3 phases while sulfurization with H 2 S at 350 °C is reported to yield sulfur-deficient SnS 2– x layers requiring a H 2 S plasma post-treatment at 300 °C to obtain stoichiometric SnS 2 . An overview of reported sulfurization processes and resulting SnS x material is provided in Table .…”

“…In comparison with conventional inorganic sulfur precursors such as H 2 S and elemental sulfur, 50,54 TBT and TBDS demonstrated a higher selectivity in the formation of SnS and 50 An overview of reported sulfurization processes and resulting SnS x material is provided in Table 1.…”

“…Morever, such an approach could facilitate the formation of SnS x /SnO 2 heterostructures where SnO 2 can directly serve as transparent electrode for contacting SnS x . But so far, the few studies conducted on sulfurization of SnO 2 layers were limited to the use of the highly toxic H 2 S or low volatility elemental sulfur and either display limited kinetic or require high temperatures (550 °C) with the formation of mixed tin sulfide phases …”

“…53 But so far, the few studies conducted on sulfurization of SnO 2 layers were limited to the use of the highly toxic H 2 S or low volatility elemental sulfur and either display limited kinetic 50 or require high temperatures (550 °C) with the formation of mixed tin sulfide phases. 54 In this study, we investigate the use of volatile and nontoxic organosulfur molecules, namely tert-butylthiol (TBT) and tertbutyl disulfide (TBDS) (see Figure 1), as a safe and convenient alternative to H 2 S and elemental sulfur to convert selectively ALD-deposited SnO 2 thin films into SnS or SnS 2 . Reaction kinetics are studied, and the tin sulfide thin films are fully characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), Raman spectroscopy, and high-resolution (scanning) transmission electron microscopy (HRTEM and HRSTEM).…”