SnSe Nanocrystals: Synthesis, Structure, Optical Properties, and Surface Chemistry

Baumgardner, William J.; Choi, Joshua J.; Lim, Yee‐Fun; Hanrath, Tobias

doi:10.1021/ja1013745

Cited by 275 publications

(219 citation statements)

References 25 publications

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“…It indicates that as the stoichiometric proportion of rhenium increases the unit cell density increases since the total weight of the atoms in the unit cell is also decreases. The lattice parameters a; b and c obtained for SnSe single crystals were compared and found in agreement with those earlier reported by different investigators [13][14]. …”

Section: Resultssupporting

confidence: 88%

Growth and Structural Characterization of DVT Grown SnSeReX(X = 0, 0.1, 0.2, 0.3, 0.4) Crystals

Patel¹

2015

IJIRSET

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Among the IV-VI semiconductor compounds, Tin sulphide (SnS), Tin selenide (SnSe), Germanium Sulphide (GeS) and Germanium Selenide (GeSe) have the layered orthorhombic structure with eight atoms per unit cell forming biplanar layers normal to the largest c axis [1][2][3][4]. In the present work, investigation on growth of single crystals of SnSeRex (x = 0, 0.1, 0.2, 0.3, 0.4) by direct vapour transport technique (DVT) using two zone horizontal furnace is reported. Confirmation of stoichiometric proportion of constituent elements and determination of crystal structure of grown crystals is done by Energy Dispersive Analysis of X-rays (EDAX).The structural behaviour was accomplished by X-Ray diffraction (XRD) studies. As a result, it seen to be orthorhombic structure and results are discussed.

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Section: Resultssupporting

confidence: 88%

Growth and Structural Characterization of DVT Grown SnSeReX(X = 0, 0.1, 0.2, 0.3, 0.4) Crystals

Patel¹

2015

IJIRSET

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“…Oleylamine is a strong ligand for Cu, Zn, Sn and Cd. 8,12,13,29,33 Therefore, oleylamine could promote the decomposition of metal compounds and cap the generated wurtzite crystal seeds to reduce the surface energy. These two factors contribute to the formation of the dynamically stable wurtzite phase.…”

Section: Resultsmentioning

confidence: 99%

“…10,11 Many attractive colloidal NCs, including SnSe, PbS and I-III-VI 2 NCs and so on, have been prepared in consideration of band gap optimization for wider solar spectral response. 5,8,[12][13][14][15][16] Among them, I-III-VI 2 , especially copper indium diselenide (CuInSe 2 ), is proven a very promising light-absorbing materials in photoelectric devices, because of their high optical-absorption coefficients and versatile optical and electrical characteristics, which can in principle, be manipulated and tuned for a specific need in a given device. 17 The nearly 20% energy conversion efficiency of CuInSe 2 -based singlejunction solar cells has been demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Wurtzite Cu2ZnSnSe4 nanocrystals for high-performance organic–inorganic hybrid photodetectors

2012

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Indium-free quaternary chalcogenide, Cu 2 ZnSnSe 4 (CZTSe), has driven much attention for its potential application in photovoltaics and optoelectronics. It is well known that the composition and structure of nanocrystals (NCs) significantly affect their optical and electrical properties. Controllable synthesis of materials with new crystal structures, especially metastable structures, has given impetus to the development of nanomaterials with many new exciting properties and applications. Highquality CZTSe NCs with thermodynamically metastable wurtzite phase and optical band gap of 1.46 eV were herein synthesized via a facile, lost-cost and safe-solution method. The formation mechanism of the wurtzite CZTSe NCs was investigated in detail, which indicates high reaction rate and low surface energy are favorable for the formation of wurtzite structure. The promising application of as-synthesized NCs in photovoltaics and optoelectronics has been demonstrated by the high-performance hybrid photodetector made from CZTSe NCs and P3HT, with an on/off ratio larger than 150.

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“…Although their optical properties have been intensively investigated 22,23 , their thermoelectric properties have long been ignored since a simple study in 1963, which reported room temperature ZTs of 0.15 for SnSe and 0.27 for SnS, respectively 24 . Recently, ZTs as high as…”

Section: Introductionmentioning

confidence: 99%

First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS

Guo¹,

Wang²,

Kuang³

et al. 2015

Phys. Rev. B

409

406

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Tin selenide (SnSe) and tin sulfide (SnS) have recently attracted particular interest due to their great potential for large-scale thermoelectric applications. A complete prediction of the thermoelectric performance and the understanding of underlying heat and charge transport details are the key to further improvement of their thermoelectric efficiency. We conduct comprehensive investigations of both thermal and electrical transport properties of SnSe and SnS using first-principles calculations combined with the Boltzmann transport theory. Due to the distinct layered lattice structure, SnSe and SnS exhibit similarly anisotropic thermal and electrical behaviors. The cross-plane lattice thermal conductivity  L is 40-60% lower than the in-2 plane values. Extremely low  L is found for both materials because of high anharmonicity while the average  L of SnS is ~ 8% higher than that of SnSe from 300 to 750 K. It is suggested that nanostructuring would be difficult to further decrease  L because of the short mean free paths of dominant phonon modes (1-30 nm at 300 K) while alloying would be efficient in reducing  L considering that the relative  L contribution (~ 65%) of optical phonons is remarkably large. On the electrical side, the anisotropic electrical conductivities are mainly due to the different effective masses of holes and electrons along the a, b and c axes. This leads to the highest optimal ZT values along the b axis and lowest ones along the a axis in both p-type materials.However, the n-type ones exhibit the highest ZTs along the a axis due to the enhancement of power factor when the chemical potential gradually approaches the secondary conduction band valley that causes significant increase in electron mobility and density of states. Owing to the larger mobility and smaller  L along the given direction, SnSe exhibits larger optimal ZTs compared with SnS in both p-and n-type materials. For both materials, the peak ZTs of n-type materials are much higher than those of p-type ones along the same direction. The predicted highest ZT values at 750 K are 1.0 in SnSe and 0.6 in SnS along the b axis for the p-type doping while those for the n-type doping reach 2.7 in SnSe and 1.5 in SnS along the a axis, rendering them among the best bulk thermoelectric materials for large-scale applications. Our calculations show reasonable agreements with the experimental results and quantitatively predict the great potential in further enhancing the thermoelectric performance of SnSe and SnS, especially for the n-type materials.

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SnSe Nanocrystals: Synthesis, Structure, Optical Properties, and Surface Chemistry

Cited by 275 publications

References 25 publications

Growth and Structural Characterization of DVT Grown SnSeReX(X = 0, 0.1, 0.2, 0.3, 0.4) Crystals

Growth and Structural Characterization of DVT Grown SnSeReX(X = 0, 0.1, 0.2, 0.3, 0.4) Crystals

Wurtzite Cu2ZnSnSe4 nanocrystals for high-performance organic–inorganic hybrid photodetectors

First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS

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