2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) 2012
DOI: 10.1109/ipmhvc.2012.6518842
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SNS LEBT Chopper improvements

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Cited by 5 publications
(5 citation statements)
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“…As discussed in [3], failures of the MOSFET switches and blocking diodes in the pulser were correlated to arcing in the LEBT structure. Four major changes were made in 2011: reduced arc rate, improved voltage sharing, improved voltage clamping and modified gate latching [3].…”
Section: Protection Of Mosfet Switchmentioning
confidence: 98%
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“…As discussed in [3], failures of the MOSFET switches and blocking diodes in the pulser were correlated to arcing in the LEBT structure. Four major changes were made in 2011: reduced arc rate, improved voltage sharing, improved voltage clamping and modified gate latching [3].…”
Section: Protection Of Mosfet Switchmentioning
confidence: 98%
“…Four major changes were made in 2011: reduced arc rate, improved voltage sharing, improved voltage clamping and modified gate latching [3]. These upgrades resulted in zero switch failures during last two years operation.…”
Section: Protection Of Mosfet Switchmentioning
confidence: 99%
“…As discussed in [3], failures of the MOSFET switches and blocking diodes in the pulser were correlated to arcing in the LEBT structure. Four major changes were made in 2011: reduced arc rate, improved voltage sharing, improved voltage clamping and modified gate latching [3]. These upgrades resulted in zero switch failures during last two years operation.…”
Section: Protection Of Mosfet Switchmentioning
confidence: 98%
“…As a result, multiple changes have been designed to mitigate these failures. The results of study and upgrades have been described in [3]. Since the upgrades were implemented in 2011, there have been no pulser failures, allowing further work on rise/fall time improvement.…”
Section: A Historymentioning
confidence: 99%
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