2017
DOI: 10.1016/j.electacta.2017.01.036
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SnS 2 Nanoflakes Anchored Graphene obtained by Liquid Phase Exfoliation and MoS 2 Nanosheet Composites as Lithium and Sodium Battery Anodes

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Cited by 54 publications
(15 citation statements)
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“…Compared with elemental tin and other tin‐based compounds, SnS 2 has the best buffering capability (large interlayer spacing c= 0.5899 nm) for the huge volume changes in alloying processes . However, the large c ‐direction atomic spacing weakens the interlayer van der Waals interaction, which results in poor electron transportation from sheet to sheet and finally causes remarkable capacity loss and inferior rate capability .…”
Section: Introductionmentioning
confidence: 99%
“…Compared with elemental tin and other tin‐based compounds, SnS 2 has the best buffering capability (large interlayer spacing c= 0.5899 nm) for the huge volume changes in alloying processes . However, the large c ‐direction atomic spacing weakens the interlayer van der Waals interaction, which results in poor electron transportation from sheet to sheet and finally causes remarkable capacity loss and inferior rate capability .…”
Section: Introductionmentioning
confidence: 99%
“…Zhang et al prepared MoS 2 nanosheetgraphene-SnS 2 nanoflakes composites by am icrowave-assisted hydrothermalm ethod. [82] When applieda se lectrode materials for LIB and SIB, thesec omposites exhibitede nhanced electrochemical properties. Wang et al synthesized TiO 2 @Carbon@MoS 2 hierarchical nanotubes for LIB, [96] which delivered the large capacity of 590 mAh g À1 at 1.0Ag À1 after 200 cycles.O ur group demonstrated that the additive effects of nanosheets for TMD-based electrodem aterials originated from the high surfacea rea and prevention of self-restacking.…”
Section: Libs/sibsmentioning
confidence: 99%
“…SnS 2 is a hexagonal structure semiconductor with large lattice constant along (001) direction (0.59 nm) . It is easily to obtain ultrathin SnS 2 nanosheets and many work prepared composites with this ultrathin SnS 2 nanosheets . SnS 2 has relative narrow bandgap (~2.4 eV) and high specific surface area which is very suitable to be coupled with ZnS for constructing heterojunction.…”
Section: Introductionmentioning
confidence: 99%