2016
DOI: 10.1016/j.jallcom.2016.04.220
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SnO2 nanocrystals with abundant oxygen vacancies: Preparation and room temperature NO2 sensing

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Cited by 103 publications
(30 citation statements)
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“…In most cases, for this purpose, the n-type semiconductors such as SnO 2 [14][15][16][17][18][19][20], ZnO [21][22][23][24][25][26], WO 3 [27][28][29][30][31][32], In 2 O 3 [33,34], and TiO 2 [35] are used traditionally. In recent years, the search of the materials, which would be capable to lower the detection limit of oxidizing gases, became more active.…”
Section: Novel Nanomaterials -Synthesis and Applicationsmentioning
confidence: 99%
“…In most cases, for this purpose, the n-type semiconductors such as SnO 2 [14][15][16][17][18][19][20], ZnO [21][22][23][24][25][26], WO 3 [27][28][29][30][31][32], In 2 O 3 [33,34], and TiO 2 [35] are used traditionally. In recent years, the search of the materials, which would be capable to lower the detection limit of oxidizing gases, became more active.…”
Section: Novel Nanomaterials -Synthesis and Applicationsmentioning
confidence: 99%
“…No other impurity peaks can be found in the XRD patterns, indicating that the as‐synthesized SnO 2 nanomaterials are high purity. The mean sizes of the as‐prepared samples were calculated from the width of (110) peak by using Debye‐Scherrer equation: trueD=0.89λ/(β·prefixcosθ) …”
Section: Resultsmentioning
confidence: 99%
“…The O 1s spectra of RTT and IWBT are presented in Figure c and d, respectively. It is obvious that the two O 1s spectra are composed of O L peak centered at 530.8 eV, O V peak centered at 531.4 eV and O C peak centered at 532.6 eV, where O L is the Sn‐O−Sn lattice oxygen in SnO 2 structure, O V is the oxygen vacancy and O C is the chemisorbed oxygen (OH − , O − and O 2 − ). As it can be seen from Table , the relative percentage of O V peak areas for IWBT (53.3%) is higher than that of RTT (47.0%), indicating that the oxygen vacancy content of IWBT is more than that of RTT.…”
Section: Resultsmentioning
confidence: 99%
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“…They are usually recognized as the most economic materials as gas sensors, such as high sensitivity, fast response and recovery, low detection limits, low fabrication cost, simplicity in fabrication, measurement, and function durability compared to other semiconductors [4]. For example, SnO 2 [5], ZnO [6], In 2 O 3 [7], NiO [8], WO 3 [9], CuO [10], CeO 2 [11] and TiO 2 [12,13] are very common MOS and widely applied in various gas detection. Vanadium oxide, as an n-type semiconductor with a band gap of 2.2 eV, has received large amounts of attention in the past few years.…”
Section: Introductionmentioning
confidence: 99%