SnO 2 thin films grown by atomic layer deposition using a novel Sn precursor

Choi, Min Jung; Cho, Cheol Jin; Kim, Kwang Chon; Pyeon, Jung Joon; Park, Hyung Ho; Kim, Hyo Suk; Han, Jeong Hwan; Kim, Chang Gyoun; Chung, Taek; Park, Tae Joo; Kwon, Beomjin; Jeong, Doo Seok; Baek, Seung Hyub; Kang, Chong Yun; Kim, Jin Sang; Kim, Seong Keun

doi:10.1016/j.apsusc.2014.09.054

Cited by 38 publications

(17 citation statements)

References 21 publications

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“…This clearly shows that the central Sn 2+ ions in the Sn precursor are oxidized during the ALD process owing to the strong oxidizing power of H 2 O 2 . The result lines up well with an earlier report, which showed the formation of n ‐type SnO 2 when Sn(dmamp) 2 was reacted with O 3 , which is also a strong oxidant . The chemical state of the binary SnO x from the Sn(dmamp) 2 /H 2 O 2 ALD was separately confirmed as being Sn 4+ as shown in Figure S3.…”

Section: Resultssupporting

confidence: 91%

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Band gap engineering of atomic layer deposited Zn_xSn_1‐xO buffer for efficient Cu(In,Ga)Se₂ solar cell

Agbenyeke

Song

Park

et al. 2018

Progress in Photovoltaics

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Ternary zinc tin oxide (ZTO) is one of the few environmental compatible buffer materials with the potential of replacing the n‐CdS buffer in Cu(In,Ga)Se2 (CIGS) solar cells and other photovoltaic systems once its properties are fully understood and optimized. In this work, ZTO films were grown by atomic layer deposition and were logically characterized with the aim of understanding the correlations between compositional changes and film properties. The ZnO:SnO2 pulse ratio significantly affected the growth rate, crystal structure, morphology, and band gap of the ZTO films. By controlling the Sn/(Sn + Zn) atomic ratio, the optical band gap of the ZTO films was tuned between 3.05 and 3.36 eV. Integrating the ZTO films as buffer layers in CIGS solar cells, we observed that films with Sn concentrations of 9 to 16 at.% yielded photo‐conversion efficiency close to 14%, which was very comparable to efficiency attained with the commonly used CdS buffer. Furthermore, using X‐ray photoelectron spectroscopy analysis, we correlated the current‐voltage behavior of the cells to the conduction band offset at the ZTO/ CIGS interface.

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Section: Resultssupporting

confidence: 91%

“…which is also a strong oxidant. 25 The chemical state of the binary SnO x from the Sn(dmamp) 2 /H 2 O 2 ALD was separately confirmed as being Sn 4+ as shown in Figure S3. We previously reported the growth of relative to the Zn LMM auger peak as the Sn atomic percent increased.…”

Section: Introductionmentioning

confidence: 90%

Band gap engineering of atomic layer deposited Zn_xSn_1‐xO buffer for efficient Cu(In,Ga)Se₂ solar cell

Agbenyeke

Song

Park

et al. 2018

Progress in Photovoltaics

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“…For SO-SnO 2 films, the GPC of 0.071-0.087 nm/cycle was obtained in the ALD temperature window of 150-250 • C. At deposition temperatures of 100 and 300 • C, the GPC values were higher than those at 150-250 • C probably due to condensation of Sn(dmamp) 2 precursor and enhanced reaction kinetics between Sn(dmamp) 2 and O 2 plasma at 100 and 300 • C, respectively. The SO-SnO 2 films showed higher GPC values than those of SnO 2 films obtained from the same Sn(dmamp) 2 precursor and O 3 (0.017-0.042 nm/cycle) [17]. Compared with SH-SnO 2 , the SO-SnO 2 films exhibited high refractive index values of 1.9-2.0 at all deposition temperatures, indicating the formation of dense SnO 2 films irrespective of deposition temperature.…”

Section: Methodsmentioning

confidence: 87%

Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

et al. 2020

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Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

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“…The assembly of molecular building blocks or chemical synthesis through the vapor phase transport, electrochemical deposition, and solution-based or template-based growth are on the basis of preparation procedures. These procedures may include the vapor-solid or vapor-liquid-solid growth, chemical or physical vapor deposition, metal organic chemical vapor deposition, and the thermal oxidation of metals [21][22][23][24]. The vapor phase deposition method is mainly performed at elevated temperatures under the gas flow in a chamber [23,25].…”

Section: Metal Oxide Nanostructures Growth and Fabrication Methodsmentioning

confidence: 99%

“…These procedures may include the vapor-solid or vapor-liquid-solid growth, chemical or physical vapor deposition, metal organic chemical vapor deposition, and the thermal oxidation of metals [21][22][23][24]. The vapor phase deposition method is mainly performed at elevated temperatures under the gas flow in a chamber [23,25]. Great efforts have been made for the fabrication of one dimensional (1D) and thin film metal oxide nanostructures using the chemical vapor deposition (CVD) method, which involves the formation of nanomaterials onto the substrate by the chemical reactions of vapor phase precursors [5,[26][27][28].…”

Section: Metal Oxide Nanostructures Growth and Fabrication Methodsmentioning

confidence: 99%

Metal Oxide Nanostructures in Food Applications: Quality Control and Packaging

et al. 2018

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Metal oxide materials have been applied in different fields due to their excellent functional properties. Metal oxides nanostructuration, preparation with the various morphologies, and their coupling with other structures enhance the unique properties of the materials and open new perspectives for their application in the food industry. Chemical gas sensors that are based on semiconducting metal oxide materials can detect the presence of toxins and volatile organic compounds that are produced in food products due to their spoilage and hazardous processes that may take place during the food aging and transportation. Metal oxide nanomaterials can be used in food processing, packaging, and the preservation industry as well. Moreover, the metal oxide-based nanocomposite structures can provide many advantageous features to the final food packaging material, such as antimicrobial activity, enzyme immobilization, oxygen scavenging, mechanical strength, increasing the stability and the shelf life of food, and securing the food against humidity, temperature, and other physiological factors. In this paper, we review the most recent achievements on the synthesis of metal oxide-based nanostructures and their applications in food quality monitoring and active and intelligent packaging.

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SnO 2 thin films grown by atomic layer deposition using a novel Sn precursor

Cited by 38 publications

References 21 publications

Band gap engineering of atomic layer deposited Zn_xSn_1‐xO buffer for efficient Cu(In,Ga)Se₂ solar cell

Band gap engineering of atomic layer deposited Zn_xSn_1‐xO buffer for efficient Cu(In,Ga)Se₂ solar cell

Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Metal Oxide Nanostructures in Food Applications: Quality Control and Packaging

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SnO 2 thin films grown by atomic layer deposition using a novel Sn precursor

Cited by 38 publications

References 21 publications

Band gap engineering of atomic layer deposited ZnxSn1‐xO buffer for efficient Cu(In,Ga)Se2 solar cell

Band gap engineering of atomic layer deposited ZnxSn1‐xO buffer for efficient Cu(In,Ga)Se2 solar cell

Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Metal Oxide Nanostructures in Food Applications: Quality Control and Packaging

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Product

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Band gap engineering of atomic layer deposited Zn_xSn_1‐xO buffer for efficient Cu(In,Ga)Se₂ solar cell

Band gap engineering of atomic layer deposited Zn_xSn_1‐xO buffer for efficient Cu(In,Ga)Se₂ solar cell