Sn whisker growth mitigation by using NiO sublayers

Borra, Vamsi; Itapu, Srikanth; Georgiev, Daniel G.

doi:10.1088/1361-6463/aa8ec7

Cited by 8 publications

(3 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Similarly, ink-jet printed p-type NiO x TFTs annealed at 280 • C in [39] gave the best electrical performance with a field-effect mobility of 0.78 cm 2 /Vs, SS of 1.68 V/dec, on/off current ratio (I on /I off ) of 5.3 × 10 4 with a 50 nm Al 2 O 3 insulator layer. The authors in [40] successfully achieved p-type NiO TFTs with a mobility of 6.0 cm 2 /Vs and on/off current ratio of 10 7 at a temperature of 250 • C. Hence, from our previous works [5][6][7]23,29], we propose a noncontact laser irradiation on sputter-deposited NiO x /SiO 2 -based TFTs as a potential technique to enhance the electrical parameters by tuning the laser fluence and a number of laser pulses. In this work, the relation between the number of laser pulses to the mobility of NiO x , threshold voltage, on/off ratio and subthreshold swing of the NiO x /SiO 2 TFT device is also studied extensively.…”

Section: Introductionmentioning

confidence: 95%

“…NiO x is a particularly interesting and promising material due to its wide range of applicability vis-à-vis rectifying diodes [5], p-type Metal Insulator Semiconductor (MIS) structures [6], tin whisker growth mitigation by NiO sublayers [7], etc. The stoichiometric NiO is a Mott insulator with a conductivity of 10 −13 S/cm, while nonstoichiometric NiO x is a wide-band-gap p-type semiconductor [8].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Tuning the Electrical Parameters of p-NiOx-Based Thin Film Transistors (TFTs) by Pulsed Laser Irradiation

Manojreddy¹,

Itapu

Ravali

et al. 2021

Condensed Matter

Self Cite

View full text Add to dashboard Cite

We utilized laser irradiation as a potential technique in tuning the electrical performance of NiOx/SiO2 thin film transistors (TFTs). By optimizing the laser fluence and the number of laser pulses, the TFT performance was evaluated in terms of mobility, threshold voltage, on/off current ratio and subthreshold swing, all of which were derived from the transfer and output characteristics. The 500 laser pulses-irradiated NiOx/SiO2 TFT exhibited an enhanced mobility of 3 cm2/V-s from a value of 1.25 cm2/V-s for as-deposited NiOx/SiO2 TFT, subthreshold swing of 0.65 V/decade, on/off current ratio of 6.5 × 104 and threshold voltage of −12.2 V. The concentration of defect gap states as a result of light absorption processes explains the enhanced performance of laser-irradiated NiOx. Additionally, laser irradiation results in complex thermal and photo thermal changes, thus resulting in an enhanced electrical performance of the p-type NiOx/SiO2 TFT structure.

show abstract

Section: Introductionmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

Tuning the Electrical Parameters of p-NiOx-Based Thin Film Transistors (TFTs) by Pulsed Laser Irradiation

Manojreddy¹,

Itapu

Ravali

et al. 2021

Condensed Matter

Self Cite

View full text Add to dashboard Cite

show abstract

“…The chemical methods to change the properties of matter are widely used in various fields [19][20][21][22][23][24][25][26]. In the process of growing the thin films, reactive sputtering is often applied to improve the properties of thin films [27,28]. Reactive sputtering with nitrogen is a deposition technique which could effectively reduce roughness and stress in thin films.…”

Section: Introductionmentioning

confidence: 99%

Microstructure and Stress of Ni/C Multilayer Films Prepared by Reactive Sputtering

Peng

Ouyang

2022

Coatings

View full text Add to dashboard Cite

Magnetron-sputtered Ni/C multilayers with a periodic thickness below 4 nm are difficult to produce, and reactive sputtering with nitrogen is a feasible method. The effects of nitrogen on the reflectivities of Ni/C multilayers were investigated. Pure argon and three mixing ratios of 4%, 8%, and 15% nitrogen-argon gas mixture were used as the working gas. For all Ni/C multilayer samples, each contains 40 bilayers. The nominal structure has a periodic thickness of 3.8 nm, with a ratio of the thickness of the Ni layer to the periodic thickness of Г = 0.39. The results of grazing incidence X-ray reflectivity (GIXRR) measurements indicate that reactively-sputtered Ni/C multilayers have a lower interface width and higher specular reflectance. It was shown in transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS) measurements that a periodic layered structure can still be clearly observed in Ni/C multilayers with pure argon, but with quite rough interfaces between the adjacent layers. For Ni/C multilayers with the mixing ratio of 4% nitrogen-argon gas mixture, it is found that the interfaces between Ni and C layers become smoother and sharper. Additionally, nitrogen incorporation can reduce the mobility of Ni atoms, which decreases the threshold thickness that Ni layers would become continuous. This may be also a reason which accounts for the better interface quality of reactively-sputtered Ni/C multilayers. Meanwhile, Ni/C multilayers deposited with a nitrogen-argon gas mixture have lower stress due to the reduction in Ni adatom mobility.

show abstract

Mitigation of whisker growth by improving the creep properties of Sn coating with bismuth

et al. 2021

View full text Add to dashboard Cite

Sn whisker growth mitigation by using NiO sublayers

Cited by 8 publications

References 38 publications

Tuning the Electrical Parameters of p-NiOx-Based Thin Film Transistors (TFTs) by Pulsed Laser Irradiation

Tuning the Electrical Parameters of p-NiOx-Based Thin Film Transistors (TFTs) by Pulsed Laser Irradiation

Microstructure and Stress of Ni/C Multilayer Films Prepared by Reactive Sputtering

Mitigation of whisker growth by improving the creep properties of Sn coating with bismuth

Contact Info

Product

Resources

About