Carbon- and silicon-based
n-type materials tend to suffer from
instability of the corresponding radical anions. With DFT calculations,
we explore a promising route to overcome such challenges with molecular
nanocages which utilize the heavier element Ge. The addition of fluorine
substituents creates large electron affinities in the range 2.5–5.5
eV and HOMO–LUMO gaps between 1.6 and 3.2 eV. The LUMOs envelop
the surfaces of these structures, suggesting extensive delocalization
of injected electrons, analogous to fullerene acceptors. Moreover,
these Ge
n
F
n
inorganic cages are found to be transparent in the UV–visible
region as probed with their excited states. Their capacitance, linear
polarizabilities, and dielectric constants are computed and found
to be on the same order of magnitude as saturated oligomers and some
extended π-organics (azobenzenes). Furthermore, we explore fullerene-type endohedral isomers, i.e., cages with internal substituents
or guest atoms, and find them to be more stable than the parent exohedral isomers by up to −206.45 kcal mol–1. We also consider the addition of Li, He, Cs, and Bi, to probe the
utility of the exo/endo cages as
host–guest systems. The endohedral He/Li@F8@Ge60F52 cages are significantly more
stable than their parent exohedral isomers He/Li@Ge60F52 by −182.46 and −49.22 kcal mol–1, respectively. The energy of formation of endohedral He@F8@Ge60F52 is exothermic by −10.4 kcal mol–1, while
Cs and Bi guests are too large to be accommodated but are stable in
the exohedral parent cages. Conceivable applications
of these materials include n-type semiconductors and transparent electrodes,
with potential for novel energy storage modalities.