“Smart” silicon: Switching between <i>p</i>‐ and <i>n</i>‐conduction under compression

Ovsyannikov, Sergey V.; Korobeinikov, Igor V.; Morozova, N. V.; Misiuk, A.; Abrosimov, Nikolai V.; Shchennikov, Vladimir V.

doi:10.1063/1.4742345

Cited by 23 publications

(25 citation statements)

References 55 publications

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“…For the Cz-Si crystals with small amount of Ge atoms the results of S(P ) measurements strongly distinguish from ones for the above listed Ge-free Cz-Si samples (Fig. 4) [14]. The value of S suers abrupt jumps with the sign inversion far from the expected structural phase transition Si-I → Si-II.…”

Section: Resultsmentioning

confidence: 89%

“…By application of higher pressures between 0.8 and 1.5 GPa, i.e., beyond the thermopower negative extremum point (Fig. 4) the irreversible p−n switching occurs [14]. Irreversible n−p turn to an almost compensated state with nearly equivalent p-and n-contributions in S is achieved by applied pressure above ≈ 23 GPa (Fig.…”

Section: Resultsmentioning

confidence: 97%

“…The value of S suers abrupt jumps with the sign inversion far from the expected structural phase transition Si-I → Si-II. The thermopower data show reversible p−n switching by applied pressure of ≈ 0.3 0.6 GPa [14] (Fig. 4).…”

Section: Resultsmentioning

confidence: 99%

“…Ge atoms in Si are known to act as traps for donor--vacancy complexes [14,3639]. So, both the presences of Ge atoms, as well as the interstitial oxygen are responsible for such S switching eect [14].…”

Section: Resultsmentioning

confidence: 99%

“…[13] it was demonstrated that using stress-related techniques one can write conducting Si-III zones on silicon surface, and thus to create the semiconductormetal structures. Recently at Cz-Si samples with small addition of Ge atoms (1.42.6%) the eect of switching of S sign found at low pressures [14] made it possible to create not only semiconductor metal nanostructures, but also the various semiconductor p−n type structures at the samples surface. So, the investigation of the thermoelectric properties of Cz-Si under high pressures is of interest as for the characterization of the impurity-defect structure, as well as in the view of possible applications in microelectronics techniques.…”

Section: Introductionmentioning

confidence: 99%

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High-Pressure Treatment up to 25~GPa of Czochralski Grown Si Samples Containing Different Admixtures and Defects

2013

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The thermoelectric properties of a set of single crystalline Si wafers with dierent oxygen concentration grown by the Czochralski technique have been studied at ultrahigh pressures up to 25 GPa. The dependence of semiconductormetal transition pressure at Czochralski grown Si on the concentration cO of the interstitial oxygen was found to present a convex curve with the maximum near cO ≈ 9 × 10 17 cm −3 . The high pressure thermoelectric power method seems to be suitable for characterization of impurity-defect structure of Si wafers.For Si1−xGex crystals (1% < x < 3%) the strong changes of both the value and the sign of thermoelectric power have been observed at pressures much less than ones of Si-I → Si-II transition. From nanoindentation data the phase transition Si-I → Si-II, corresponding to semiconductormetal electronic transformation has been detected at the loading up to ≈ 10 mN. These ndings suggest a way for creation of integrated circuits, in which zones with dierent types of conductivity and hence dierent p−n, p−n−p etc. structures may be written by applied stress at nanoscale level, and the control on the value of the above stresses now is possible by the proposed nanoindentation technique.

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Section: Resultsmentioning

confidence: 89%

Section: Resultsmentioning

confidence: 97%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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High-Pressure Treatment up to 25~GPa of Czochralski Grown Si Samples Containing Different Admixtures and Defects

2013

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A Hard Oxide Semiconductor with A Direct and Narrow Bandgap and Switchable p–n Electrical Conduction

et al. 2014

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An oxide semiconductor (perovskite-type Mn2 O3 ) is reported which has a narrow and direct bandgap of 0.45 eV and a high Vickers hardness of 15 GPa. All the known materials with similar electronic band structures (e.g., InSb, PbTe, PbSe, PbS, and InAs) play crucial roles in the semiconductor industry. The perovskite-type Mn2 O3 described is much stronger than the above semiconductors and may find useful applications in different semiconductor devices, e.g., in IR detectors.

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Photoelectric Properties of Functional Materials under High Pressure

Liu

et al. 2023

Advanced Physics Research

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The past decade has seen enormous interest in emerging photodetectors owing to their diverse applications in daily life and military fields. Tremendous progress has been made in the exploration and optimization of photoelectric materials. In particular, high pressure has been successfully adopted as a significant means to tune photoelectric properties. The remarkable enhancement in photocurrent by several orders of magnitude, induces inverse photoconductivity, and even extends the spectral response range, which was achieved by using the pressure strategy in several functional materials. In this prospective article, recent advances in pressure-regulated photoelectric properties of various functional materials are briefly elaborated on. In addition, the current challenges and possible research directions are discussed. It is sincerely hoped to inspire more new endeavors to promote further investigation of the photoelectric properties of functional materials under high pressure and provide more insights into exploring and optimizing novel photoelectric materials.

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“Smart” silicon: Switching between p‐ and n‐conduction under compression

Cited by 23 publications

References 55 publications

High-Pressure Treatment up to 25~GPa of Czochralski Grown Si Samples Containing Different Admixtures and Defects

High-Pressure Treatment up to 25~GPa of Czochralski Grown Si Samples Containing Different Admixtures and Defects

A Hard Oxide Semiconductor with A Direct and Narrow Bandgap and Switchable p–n Electrical Conduction

Photoelectric Properties of Functional Materials under High Pressure

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