Small valence band offset in (010) InS∕CuI heterojunction diodes

Abstract

Heterojunctions between the (010) facet of an orthorhombic InS single crystal and evaporated CuI show a remarkably small valence band offset of 0.15eV (cliff). This minor band offset allows rather good injection conditions for holes. In accordance to this result, the current-voltage characteristics of the device are rectifying and show a large forward voltage.

l-Alanine capping of ZnO nanorods: increased carrier concentration in ZnO/CuI heterojunction diode

“…Transparent conducting materials such as ZnO and Al-doped ZnO have been utilized as unipolar n-type semiconductors [6][7][8][9] in diode applications. 10,11 Capping, surface modication and substitution of ZnO for various applications have been studied extensively in the literature. 1,[12][13][14][15][16][17][18][19] Thus, a simple route to improve the carrier concentration of n-type semiconductors such as ZnO and to enhance the efficiency of heterojunction and photovoltaic devices has become inevitable.…”

Valence band offset at interfaces between CuI and indium sulfides

“…17 The VBO at the CuI/InS͑010͒ interface is -0.15 eV ͑cliff͒. 15 The VBO at the CuI/ AgIn 5 S 8 interface was -0.5 eV ͑cliff͒. 18 Although Cu-Ag intermixing was detected at this interface, our conclusions below do not seem to be influenced by this fact.…”

“…The crystals were cleaved under ultrahigh vacuum ͑UHV͒ conditions prior to the XPS investigation. As an exception, since InS crystals had smooth ͑010͒ facets after growth, 15 they were transferred into the UHV chamber from the growth ampoule into the UHV with an air exposure time of a few minutes. In all of the measurements, CuI was evaporated step by step from a Knudsen-type cell, beginning with 3 Å steps.…”

Low temperature preparation p-CuI/n-ZnO wide gap heterojunction diode

“…Wide gap diode structures are attractive for various applications including tandem solar cells, light emission devices, UV detectors, and display technology [1]. Utilization of wide gap semiconductors for fabrication of p-n heterojunctions often fails due to doping limitations in semiconductors having a large band gap [2].…”