Small turn-on delay time in 1.3 mu m InAsP/InP strained double quantum-well lasers with very-low threshold current

Transmission line model for strained quantum well lasers including carrier transport and carrier heating effects

“…Carrier transport plays an important role in determining the temporal and spectral responses of QW lasers [13][14][15]. Inferior modulation responses have been reported in the QW lasers due to carrier transport effects [16][17]. The carrier transport which includes, the separate confinement heterostructure and the inter-well transports, reduces the effective differential gain and increases the carrier recombination lifetime in the QW lasers.…”

Atomic-scale compositional structure of InAsP/InP and InNAsP/InP heterostructures grown by molecular-beam epitaxy

“…The InAs x P 1Ϫx /InP and, more recently, InN x As y P 1ϪxϪy /InP heterostructure material systems have shown considerable promise for lasers and other optoelectronic devices operating at 1.06, 1.3, and 1.55 m. [1][2][3][4] For InAs x P 1Ϫx /InP quantum well structures, the compressive strain in the InAs x P 1Ϫx layer leads to a smaller valence-band effective mass that facilitates population inversion in lasers. 5 Furthermore, the large conduction-band offset in this material system 6 (⌬E c Х0.75⌬E g ) leads to efficient electron confinement and reduced leakage current in laser diodes, thereby minimizing the threshold current in InAs x P 1Ϫx /InP lasers.…”

“…5 Furthermore, the large conduction-band offset in this material system 6 (⌬E c Х0.75⌬E g ) leads to efficient electron confinement and reduced leakage current in laser diodes, thereby minimizing the threshold current in InAs x P 1Ϫx /InP lasers. 1 Finally, the composition in the InAs x P 1Ϫx /InP system is easier to control than that in the In x Ga 1Ϫx As y P 1Ϫy /InP quaternary system, which has been explored extensively for optoelectronic device applications at wavelengths of 0.98-1.55 m. 2,7 More recently, InN x As y P 1ϪxϪy alloys have generated considerable interest, because incorporation of N at low concentration into the InAs x P 1Ϫx alloy layers has been shown to produce a substantial decrease in band gap, 8 can partially compensate for strain due to As present in the alloy, and may possibly increase the conduction-band offset even further. 9 Above room-temperature lasing has been realized in InN x As y P 1ϪxϪy /In x Ga 1Ϫx As y P 1Ϫy quantum well microdisk lasers, with the improved performance compared to In x Ga 1Ϫx As/In x Ga 1Ϫx As y P 1Ϫy quantum well lasers possibly due to an enhanced conduction-band offset coming from nitrogen incorporation.…”