Small-signal admittance of a Gunn-effect device

Hobson, G.S.

doi:10.1049/el:19660175

Cited by 16 publications

(3 citation statements)

References 2 publications

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“…Here R p and X p are added due to the effects of the coaxial probe feed. Also R d and C d are the negative differential resistance and capacitance of a fully depicted triangular domain for a Gunn diode [13] respectively. R p , X p and C d are so small compared to the other components of the antenna that they can be neglected.…”

Section: Impedance Of the Gunn Loaded Stacked Antennamentioning

confidence: 99%

A frequency agile stacked annular ring microstrip antenna using a Gunn diode

Ansari¹,

Ram²,

Dubey³

et al. 2007

Smart Mater. Struct.

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In this paper, an analysis of a Gunn loaded stacked annular ring microstrip antenna is presented using a circuit concept. Consequently, various parameters such as input impedance, voltage standing wave ratio, return loss, band width, radiation pattern, and beam width of the antenna are evaluated as a function of bias voltage for different threshold values. It is found that the operating frequency of the Gunn loaded stacked patch is controllable with the bias voltage. The band width of the Gunn loaded stacked patch is improved to 11.61% as compared to the 9.16% band width of the stacked patch in addition to there being better matching and wider tunability. The radiated power and beam width of the stacked patch are also enhanced by loading a Gunn diode with it.

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Section: Impedance Of the Gunn Loaded Stacked Antennamentioning

confidence: 99%

A frequency agile stacked annular ring microstrip antenna using a Gunn diode

Ansari¹,

Ram²,

Dubey³

et al. 2007

Smart Mater. Struct.

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“…The diodes were fabricated at E2V Technologies using standard techniques to incorporate integral heat sinks [6]. The devices were wet-etched down in a cross-sectional area until the threshold current, I th (at which the dc current peaks because of the onset of intervalley transfer [7]), was reduced to around 1 A. Experience shows that this structure gives optimal impedance match with the cavity for a commercial STGD.…”

Section: Growth and Fabricationmentioning

confidence: 99%

Double transit region Gunn diodes

Lau¹,

Tozer²,

David³

et al. 2007

Semicond. Sci. Technol.

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We report the first epitaxially grown, double transit region Gunn diode oscillator. The prototype device was operated at its second harmonic of 77 GHz, giving an RF output power of 64 mW as compared with 54 mW from the corresponding single transit region device. Measurements of threshold and breakdown voltage and of RF power support the interpretation of coherent nucleation of Gunn domains in the two transit regions and the satisfactory operation of the device.

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“…One-dimensional models are used to represent this structure because domains propagate between the parallel ohmic contacts and because the length of the active n layer is usually much smaller than the device diameter. The term 'domain' describes the non-uniformity in the electric field and electron distribution which characterises the operation of TED (see Hobson (1974) for a more complete description). The domain travels through the device towards the anode.…”

Section: Examples Ofjinite-diference Applicationsmentioning

confidence: 99%

Semiconductor device modelling

Snowden

1985

Rep. Prog. Phys.

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An overview of semiconductor device modelling is presented which describes the principal methods of representing and analysing modern solid-state devices. The review deals with classical, semiclassical, particle and quantum transport methodologies and compares the relative merits of each approach. The background behind each modelling technique is briefly summarised and recent developments in each area are described. The importance of accounting for non-stationary and quantum effects in small geometry devices is emphasised.

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Small-signal admittance of a Gunn-effect device

Cited by 16 publications

References 2 publications

A frequency agile stacked annular ring microstrip antenna using a Gunn diode

A frequency agile stacked annular ring microstrip antenna using a Gunn diode

Double transit region Gunn diodes

Semiconductor device modelling

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