Small Charging Energies and <i>g</i>-Factor Anisotropy in PbTe Quantum Dots

Kate, S. C. ten; Ritter, Markus F.; Fuhrer, Andreas; Jung, Jason J.; Schellingerhout, Sander G.; Bakkers, Erik P. A. M.; Riel, Heike; Nichele, Fabrizio

doi:10.1021/acs.nanolett.2c01943

Cited by 15 publications

(10 citation statements)

References 41 publications

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“…Further study of the devices under a limited magnetic field showed tha PbTe CQDs exhibit a strong Rashba spin-orbit interaction. In 2022, Kate et al proposed a device structure for selectively growing PbTe CQDs on InP and characterized the CQD devices in both zero and finite magnetic fields (Figure 2e,f) [37]. The Coulomb charge stability analysis revealed large even-odd spacing at zero magnetic field.…”

Section: Pbte Cqd Photodetectorsmentioning

confidence: 99%

Lead Chalcogenide Colloidal Quantum Dots for Infrared Photodetectors

Zhao,

Ma,

Cai

et al. 2023

Materials

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Infrared detection technology plays an important role in remote sensing, imaging, monitoring, and other fields. So far, most infrared photodetectors are based on InGaAs and HgCdTe materials, which are limited by high fabrication costs, complex production processes, and poor compatibility with silicon-based readout integrated circuits. This hinders the wider application of infrared detection technology. Therefore, reducing the cost of high-performance photodetectors is a research focus. Colloidal quantum dot photodetectors have the advantages of solution processing, low cost, and good compatibility with silicon-based substrates. In this paper, we summarize the recent development of infrared photodetectors based on mainstream lead chalcogenide colloidal quantum dots.

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Section: Pbte Cqd Photodetectorsmentioning

confidence: 99%

Lead Chalcogenide Colloidal Quantum Dots for Infrared Photodetectors

Zhao,

Ma,

Cai

et al. 2023

Materials

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“…Here, we present the PbTe-Pb hybrid as a new planar JJ material platform for exploring topological superconductivity and other potential applications, such as gate tunable qubits. − While the PbTe-Pb hybrid has recently been proposed in its nanowire form as a Majorana candidate with promising experimental progress, − in this paper, we realize its 2DEG version, motivated by the Majorana proposals for topological planar JJs. , Selective area growth (SAG) of PbTe film has been previously achieved on InP, a substrate that is lattice-mismatched with PbTe . In this work, the SAG PbTe film is grown on a lattice-matched substrate to minimize the disorder.…”

mentioning

confidence: 99%

Selective-Area-Grown PbTe-Pb Planar Josephson Junctions for Quantum Devices

Li,

Song,

Miao

et al. 2024

Nano Lett.

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Planar Josephson junctions are predicted to host Majorana zero modes. The material platforms in previous studies are two-dimensional electron gases (InAs, InSb, InAsSb, and HgTe) coupled to a superconductor such as Al or Nb. Here, we introduce a new material platform for planar JJs, the PbTe-Pb hybrid. The semiconductor, PbTe, was grown as a thin film via selective area epitaxy. The Josephson junction was defined by a shadow wall during the deposition of superconductor Pb. Scanning transmission electron microscopy reveals a sharp semiconductor−superconductor interface. Gate-tunable supercurrents and multiple Andreev reflections are observed. A perpendicular magnetic field causes interference patterns of the switching current, exhibiting Fraunhofer-like and SQUID-like behaviors. We further demonstrate a prototype device for Majorana detection wherein phase bias and tunneling spectroscopy are applicable.

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“…The method of selective area growth (SAG) − potentially removes this roadblock by allowing large-scale lithographic control of planar nanowire growth. Already, key device concepts based on SAG nanowires have been realized, such as field effect transistors (FETs), , nanowire Hall bars, , quantum interferometers, , hybrid superconducting devices, ,, and quantum dots . So far, however, the focus has been on proof-of-principle experiments based on a few devices.…”

mentioning

confidence: 99%

Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices

Olsteins,

Nagda,

Carrad

et al. 2024

Nano Lett.

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New approaches such as selective area growth (SAG), where crystal growth is lithographically controlled, allow the integration of bottom-up grown semiconductor nanomaterials in large-scale classical and quantum nanoelectronics. This calls for assessment and optimization of the reproducibility between individual components. We quantify the structural and electronic statistical reproducibility within large arrays of nominally identical selective area growth InAs nanowires. The distribution of structural parameters is acquired through comprehensive atomic force microscopy studies and transmission electron microscopy. These are compared to the statistical distributions of the cryogenic electrical properties of 256 individual SAG nanowire field effect transistors addressed using cryogenic multiplexer circuits. Correlating measurements between successive thermal cycles allows distinguishing between the contributions of surface impurity scattering and fixed structural properties to device reproducibility. The results confirm the potential of SAG nanomaterials, and the methodologies for quantifying statistical metrics are essential for further optimization of reproducibility.

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Small Charging Energies and g-Factor Anisotropy in PbTe Quantum Dots

Cited by 15 publications

References 41 publications

Lead Chalcogenide Colloidal Quantum Dots for Infrared Photodetectors

Lead Chalcogenide Colloidal Quantum Dots for Infrared Photodetectors

Selective-Area-Grown PbTe-Pb Planar Josephson Junctions for Quantum Devices

Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices

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