Small amount of Fe/Cu/Mn-doped KNN-based ceramics

High piezoelectric and dielectric constant of Fe/In Co‐doped KNN‐based ceramics regulated by lattice distortion

“…The ε r of the undoped ceramic is 2606, while it increases to 3432 when x = 0.003, as detailed in Figure 4(B). This work obtained high piezoelectric coefficient ( d 33 = 536 pC/N) and dielectric constant ( ε r = 3432) simultaneously in KNN‐based ceramics, as shown in Figure 5 19,28,41–54 . Conductivity and domain wall motion are the main factors controlling tan δ 55 .…”

“…This work obtained high piezoelectric coefficient (d 33 = 536 pC/N) and dielectric constant (ε r = 3432) simultaneously in KNN-based ceramics, as shown in Figure 5. 19,28,[41][42][43][44][45][46][47][48][49][50][51][52][53][54] Conductivity and domain wall motion are the main factors controlling tan δ 55 . The tan δ is further reduced by a small amount of Fe 3+ and In 3+ , indicating that the conductivity of the ceramics is also low, as seen in Figure S1 and Table S1.…”

Effect of acceptor–donor co‐doping on the microstructure and electrical properties of BiScO3–PbTiO3‐based ceramics

“…3,5 Doping can be classified into "acceptor-doping" and "donor-doping" based on the role of the dopants. 6 Acceptor doping leads to the formation of oxygen vacancies, which significantly affect the electrical properties of the piezoelectric materials. 7 Mn 2+ doped BS-PT ceramics form Mn Sc '-V O •• dipolar complexes, which exhibit the typical characteristics of hard materials with significantly reduced d 33 and dielectric loss.…”

“…10 This is characterized by a reduction in mechanical quality factor (Q m ) and enhancement in the d 33 . 6 For instance, in BS-PT ceramics, Zr 4+ substitution for Sc 3+ at the B-site results in the decreased coercive field (E C ) and T C and increased d 33 . 11 Nb-and Bi-modified BS-PT ceramics showed lower Curie temperatures without significant enhancement of piezoelectric properties.…”

“…Doping is a common and effective method of enhancing the electrical performance of piezoelectric materials 3,5 . Doping can be classified into “acceptor‐doping” and “donor‐doping” based on the role of the dopants 6 . Acceptor doping leads to the formation of oxygen vacancies, which significantly affect the electrical properties of the piezoelectric materials 7 .…”