2021
DOI: 10.1109/tmtt.2020.3040414
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Slow-Wave Microstrip Line Model for PCB and Metallic-Nanowire-Filled-Membrane Technologies

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Cited by 6 publications
(3 citation statements)
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“…The accurate modeling of this interposer was described in [21] and several basic circuits in mmW have been demonstrated with good performance. Then, several passive structures used in general microwave systems were developed.…”
Section: The Mnm Interposermentioning
confidence: 99%
“…The accurate modeling of this interposer was described in [21] and several basic circuits in mmW have been demonstrated with good performance. Then, several passive structures used in general microwave systems were developed.…”
Section: The Mnm Interposermentioning
confidence: 99%
“…The advantage of the MnM technology is its low cost and good performance. The technology has been first introduced in [25] for the realization of slow wave TLs, with its electrical model presented in [26]. The availability of small vias allowed the development of compact 3-D inductors with high-quality factor at mmwaves, as shown in [27].…”
Section: Introductionmentioning
confidence: 99%
“…The suspended microstrip is modelled as a slow-wave microstrip line, whose modelling is explained in [51], where insulator capacitance is modified to include the gap height (𝑔) in its calculation (𝐶 𝐺𝐴𝑃 ), thus the gap is calculated as 𝑔 plus the oxide thickness (𝑡 𝑂𝑋 ). Aside from this modification, the nanowire inductance and resistance (𝐿 𝑁𝑊 and 𝑅 𝑁𝑊 ) and strip inductance (𝐿 𝑆 ) are calculated the same way as in a slow-wave microstrip line, as described in [52]. All variables are per unit length and should be multiplied by the suspended strip length (𝑙 𝑆 ) whenever applicable.…”
Section: Modelmentioning
confidence: 99%