2019
DOI: 10.1016/j.nimb.2019.09.031
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Slow and swift heavy ions irradiation of zirconium nitride (ZrN) and the migration behaviour of implanted Eu

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Cited by 9 publications
(15 citation statements)
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“…have concluded to a weak damage induced by the 167‐MeV Xe ions, owing to the low energy loss by nuclear collisions of Xe ions with respect to 200‐keV Eu ion implantation up to a fluence of 1 × 10 16 cm −2 . [ 69 ] This is clearly a variance with the present results since the saturation of Raman band growth occurs for a much lower fluence, which cannot be related to displacement damage. In the latter case, a linear increase versus fluence would have been expected in this range of low fluence.…”
Section: Discussioncontrasting
confidence: 56%
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“…have concluded to a weak damage induced by the 167‐MeV Xe ions, owing to the low energy loss by nuclear collisions of Xe ions with respect to 200‐keV Eu ion implantation up to a fluence of 1 × 10 16 cm −2 . [ 69 ] This is clearly a variance with the present results since the saturation of Raman band growth occurs for a much lower fluence, which cannot be related to displacement damage. In the latter case, a linear increase versus fluence would have been expected in this range of low fluence.…”
Section: Discussioncontrasting
confidence: 56%
“…Raman spectra exhibit broad bands that can be fitted by Gaussian profiles which can be assigned to acoustic TA mode at 165 cm −1 and LA mode at 225 cm −1 , and optical TO modes at 455 cm −1 and LO modes at 510 cm −1 , [ 66–69 ] with a TO‐LA phonon gap of ~230 cm −1 between them (Figure 5). This is in agreement with the phonon DOS deduced from neutron inelastic scattering.…”
Section: Discussionmentioning
confidence: 99%
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“…Interestingly, there are one peak in the region 300-410 cm -1 between the acoustic and optic modes that tends to increase in intensity with the increase of the temperature of pyrolysis. It represents a low-frequency second-order acoustic mode (2A) and it is an indication of ZrN with less stoichiometric defects [51]. It should be mentioned that the Raman peak at 660 cm -1attributed to Si3N4 [52] and present in all spectra of the samples derived from PVMSZ, and in PMZrSZ2.5_15 and PMZrSZ2.5_16 samples -indicated that the Si3N4 crystallization occurred in such samples as observed in the XRD patterns.…”
Section: High-temperature Phase and Microstructure Evolutionmentioning
confidence: 84%